Texas instruments incorporated (20240312862). THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING simplified abstract

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THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING

Organization Name

texas instruments incorporated

Inventor(s)

Benjamin Stassen Cook of Addison TX (US)

Archana Venugopal of Dallas TX (US)

Luigi Colombo of Dallas TX (US)

Robert Reid Doering of Garland TX (US)

THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240312862 titled 'THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING

Simplified Explanation

An integrated circuit with a semiconductor substrate has a trench containing a layer of nanoparticle material and an interconnect region above the trench.

Key Features and Innovation

  • Semiconductor substrate with a trench containing nanoparticle material
  • Interconnect region above the trench

Potential Applications

The technology could be used in various electronic devices, such as smartphones, computers, and other consumer electronics.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by utilizing nanoparticle materials in the semiconductor substrate.

Benefits

  • Enhanced performance of integrated circuits
  • Increased efficiency in electronic devices

Commercial Applications

The technology could be applied in the semiconductor industry for the development of advanced integrated circuits, leading to improved electronic devices in the market.

Questions about the Technology

1. How does the use of nanoparticle material in the trench benefit the integrated circuit?

The nanoparticle material in the trench helps in enhancing the performance and efficiency of the integrated circuit by providing unique properties at the nanoscale level.

2. What are the potential challenges in implementing this technology on a large scale?

Implementing this technology on a large scale may face challenges related to manufacturing processes, scalability, and cost-effectiveness.


Original Abstract Submitted

an integrated circuit includes a semiconductor substrate. the integrated circuit also includes a trench in the semiconductor substrate, the trench including a layer of a nanoparticle material. the integrated circuit further includes an interconnect region above the trench.