Taiwan semiconductor manufacturing company, ltd. (20240341204). HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341204 titled 'HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF
The semiconductor device described in the abstract consists of three films containing a phase change material (PCM) arranged along a first lateral direction, as well as metal pads and heaters positioned below each film.
- The semiconductor device includes films with phase change materials (PCMs) and metal pads arranged in a specific configuration.
- Heaters are also integrated into the device below each film to control the phase change properties of the materials.
- The design allows for precise control and manipulation of the phase change properties of the materials in the device.
- This technology could potentially be used in data storage, memory devices, and other semiconductor applications.
- By utilizing phase change materials and precise heating elements, the device offers improved performance and efficiency compared to traditional semiconductor devices.
Potential Applications: - Data storage - Memory devices - Semiconductor applications
Problems Solved: - Improved control over phase change properties - Enhanced performance and efficiency in semiconductor devices
Benefits: - Precise manipulation of phase change materials - Improved performance and efficiency - Potential for advancements in data storage and memory technology
Commercial Applications: Title: Advanced Semiconductor Devices with Phase Change Materials This technology could be utilized in the development of high-performance data storage devices, memory modules, and other semiconductor applications. The precise control over phase change properties offers potential for significant advancements in the industry.
Questions about the technology: 1. How does the integration of phase change materials improve the performance of semiconductor devices? 2. What are the potential limitations or challenges associated with using phase change materials in semiconductor applications?
Original Abstract Submitted
a semiconductor device includes a first film, a second film, and a third film that each include a phase change material (pcm) and are arranged with respect to one another along a first lateral direction. the semiconductor device includes a first metal pad, a second metal pad, a third metal pad, and a fourth metal pad. the first and second metal pads are disposed over ends of the first film, respectively, the second and third metal pads are disposed over ends of the second film, respectively, and the third and fourth metal pads are disposed over ends of the third film, respectively. the semiconductor device includes a first heater, a second heater, and a third heater, respectively disposed below the first film, the second film, and the third film.
