Taiwan semiconductor manufacturing company, ltd. (20240339533). GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES simplified abstract
Contents
- 1 GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Integrated Chips
- 1.11 Original Abstract Submitted
GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yuan-Cheng Yang of Tainan City (TW)
Yun-Chi Wu of Tainan City (TW)
Shih-Jung Tu of Tainan City (TW)
GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339533 titled 'GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE IN HIGH VOLTAGE DEVICES
Simplified Explanation
The patent application describes an integrated chip with specific structural elements for improved performance.
- The chip includes a source region, a drain region, and a shallow trench isolation (STI) structure within the substrate.
- A gate electrode is positioned over the substrate, STI structure, and between the source and drain regions.
- A portion of the gate electrode extends into the STI structure, enhancing the chip's functionality.
Key Features and Innovation
- Integration of source and drain regions with STI structure for enhanced performance.
- Gate electrode design optimizing chip functionality.
- Precise positioning of gate electrode within STI structure for improved efficiency.
Potential Applications
The technology can be applied in various semiconductor devices requiring high performance and efficiency, such as microprocessors, memory chips, and sensors.
Problems Solved
- Enhanced performance and efficiency in semiconductor devices.
- Improved isolation and functionality of integrated chips.
Benefits
- Increased performance capabilities.
- Enhanced efficiency and reliability.
- Improved overall functionality of semiconductor devices.
Commercial Applications
- The technology can be utilized in the production of advanced microprocessors, memory chips, and sensors for various industries, including electronics, telecommunications, and automotive.
Questions about Integrated Chips
How does the gate electrode design impact the performance of the integrated chip?
The gate electrode design plays a crucial role in controlling the flow of current within the chip, affecting its overall performance and efficiency.
What are the potential challenges in manufacturing integrated chips with STI structures?
Manufacturing integrated chips with STI structures may involve complex processes to ensure precise positioning and functionality, which could pose challenges in production.
Original Abstract Submitted
in some embodiments, the present disclosure relates to an integrated chip that includes a source region and a drain region arranged over and/or within a substrate. further, a shallow trench isolation (sti) structure is arranged within the substrate and between the source and drain regions. a gate electrode is arranged over the substrate, over the sti structure, and between the source and drain regions. a portion of the gate electrode extends into the sti structure such that a bottommost surface of the portion of the gate electrode is arranged between a topmost surface of the sti structure and a bottommost surface of the sti structure.
