Taiwan semiconductor manufacturing company, ltd. (20240339530). INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsin-Cheng Lin of Taipei City (TW)
Chun-Yi Cheng of New Taipei City (TW)
Ching-Wang Yao of New Taipei City (TW)
Chee-Wee Liu of Taipei City (TW)
INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339530 titled 'INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME
The integrated circuit described in the patent application consists of two transistors, each with different semiconductor channel layers, gate structures, source structures, and drain structures. The first transistor is connected to the second transistor, with the first semiconductor channel layers being thinner and having a larger bandgap compared to the second semiconductor channel layers.
- The integrated circuit includes two transistors with unique semiconductor properties.
- The first transistor has thinner semiconductor channel layers and a larger bandgap material.
- The first source structure of the first transistor is electrically coupled to the second drain structure of the second transistor.
- The second transistor has different semiconductor channel layers compared to the first transistor.
- The innovation lies in the specific design and properties of the semiconductor materials used in each transistor.
Potential Applications: - This technology could be used in the development of high-performance electronic devices. - It may find applications in the semiconductor industry for improving transistor efficiency and speed.
Problems Solved: - Enhances the performance and efficiency of transistors in integrated circuits. - Allows for better control and manipulation of electrical signals in electronic devices.
Benefits: - Improved functionality and speed of electronic devices. - Enhanced performance of integrated circuits. - Potential for energy savings in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Technology for High-Performance Electronics This technology could be utilized in the production of smartphones, computers, and other electronic devices that require high-speed and efficient transistors. The market implications include improved device performance, potentially leading to increased consumer demand and market competitiveness.
Prior Art: Further research can be conducted in the field of semiconductor materials and transistor design to explore similar innovations and advancements in integrated circuit technology.
Frequently Updated Research: Researchers are continuously exploring new semiconductor materials and transistor structures to enhance the performance of integrated circuits. Stay updated on the latest developments in semiconductor technology for potential advancements in electronic devices.
Questions about Integrated Circuits: 1. How does the design of the first and second transistors in the integrated circuit impact overall device performance? 2. What are the potential implications of using semiconductor materials with different bandgaps in integrated circuits?
Original Abstract Submitted
an integrated circuit includes a first transistor and a second transistor. the first transistor includes first semiconductor channel layers, first gate structure, and a first source structure and a first drain structure on opposites sides of the first gate structure. the second transistor includes second semiconductor channel layers, second gate structure, and a second source structure and a second drain structure on opposites sides of the second gate structure. the first source structure of the first transistor is electrically coupled to the second drain structure of the second transistor. a thickness of each of the first semiconductor channel layers is less than a thickness of each of the second semiconductor channel layers, and a bandgap of a material of the first semiconductor channel layers is larger than a bandgap of a material of the second semiconductor channel layers.
