Taiwan semiconductor manufacturing company, ltd. (20240120239). MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract
Contents
MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Wei Chang of Hsinchu (TW)
Chi-Yu Chou of Hsinchu County (TW)
Lun-Kuang Tan of Hsinchu City (TW)
Shuen-Shin Liang of Hsinchu County (TW)
MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120239 titled 'MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
Simplified Explanation
The abstract describes a method for modulating the threshold voltage of a device by providing a fin with semiconductor channel layers for a p-type transistor, forming a gate dielectric layer, and a p-type metal film, followed by annealing and removing the metal film.
- Explanation of the patent:
- Method for modulating threshold voltage of a device - Utilizes a fin with semiconductor channel layers for a p-type transistor - Forms a gate dielectric layer surrounding the semiconductor channel layers - Adds a p-type metal film around the gate dielectric layer - Anneals the semiconductor device - Removes the p-type metal film
- Potential applications of this technology:
- Semiconductor devices - Integrated circuits - Transistors
- Problems solved by this technology:
- Modulating threshold voltage of a device - Enhancing performance of semiconductor devices - Improving efficiency of integrated circuits
- Benefits of this technology:
- Increased control over device threshold voltage - Enhanced device performance - Improved reliability and stability
- Potential commercial applications of this technology:
- Electronics industry - Semiconductor manufacturing companies - Research and development in semiconductor technology
- Possible prior art:
- Prior methods of modulating threshold voltage in semiconductor devices - Previous techniques for enhancing transistor performance
Questions:
1. How does the method of forming a gate dielectric layer impact the threshold voltage modulation process? 2. What are the specific materials used in the p-type metal film and how do they contribute to the modulation of the threshold voltage?
Original Abstract Submitted
a method for modulating a threshold voltage of a device. the method includes providing a fin extending from a substrate, where the fin includes a plurality of semiconductor channel layers defining a channel region for a p-type transistor. in some embodiments, the method further includes forming a first gate dielectric layer surrounding at least three sides of each of the plurality of semiconductor channel layers of the p-type transistor. thereafter, the method further includes forming a p-type metal film surrounding the first gate dielectric layer. in an example, and after forming the p-type metal film, the method further includes annealing the semiconductor device. after the annealing, and in some embodiments, the method includes removing the p-type metal film.