Samsung electronics co., ltd. (20240381627). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Musarrat Hasan of Suwon-si (KR)
Byounghoon Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381627 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a substrate with both an nmos region and a pmos region. Inside the substrate, there is a first gate electrode in the nmos region and a second gate electrode in the pmos region. The first gate electrode includes a first electrode pattern, while the second gate electrode includes a second electrode pattern. Additionally, the first gate electrode contains a first n-type conductive pattern, and the second gate electrode contains a p-type conductive pattern with molybdenum titanium nitride (MoTiN) or molybdenum silicon nitride (MoSiN).
- The semiconductor device features separate gate electrodes for the nmos and pmos regions.
- The first gate electrode includes a first electrode pattern and a first n-type conductive pattern.
- The second gate electrode includes a second electrode pattern and a p-type conductive pattern with MoTiN or MoSiN.
- This design allows for efficient operation of both nmos and pmos transistors within the same device.
- The use of specific materials in the p-type conductive pattern enhances the performance and reliability of the semiconductor device.
Potential Applications: - Integrated circuits - Microprocessors - Memory devices
Problems Solved: - Efficient operation of nmos and pmos transistors in a semiconductor device - Enhanced performance and reliability of the device
Benefits: - Improved functionality of integrated circuits - Higher performance and reliability of microprocessors - Enhanced memory device operation
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Circuit Performance This technology can be utilized in the production of advanced integrated circuits, microprocessors, and memory devices, leading to improved performance and reliability in various electronic applications. The market implications include increased demand for high-performance semiconductor devices in the electronics industry.
Questions about Semiconductor Devices: 1. How does the use of specific materials like MoTiN or MoSiN in the p-type conductive pattern benefit the overall performance of the semiconductor device? 2. What are the key advantages of having separate gate electrodes for the nmos and pmos regions in a semiconductor device?
Original Abstract Submitted
a semiconductor device includes a substrate including an nmos region and a pmos region, a first gate electrode inside the substrate in the nmos region, and a second gate electrode inside the substrate in the pmos region. the first gate electrode includes a first electrode pattern, and the second gate electrode includes a second electrode pattern. the first gate electrode further includes a first n-type conductive pattern between the first electrode pattern and the substrate. the second gate electrode further includes a p-type conductive pattern between the second electrode pattern and the substrate, and the p-type conductive pattern includes molybdenum titanium nitride (motin) or molybdenum silicon nitride (mosin).
