Samsung electronics co., ltd. (20240349476). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JAE HYUN Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349476 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract includes a substrate with first and second active regions separated by a boundary, a device isolation layer in a trench between the active regions, gate electrodes, source/drain patterns, and active contacts.
- The device isolation layer features a protrusion structure between the active regions, adjacent to the boundary.
- The first and second active regions have respective channel patterns and source/drain patterns.
- Gate electrodes are positioned on the channel patterns, extending across the active regions.
- Active contacts are located on the source/drain patterns.
Potential Applications: - This semiconductor device can be used in various electronic applications requiring precise control of electrical currents. - It may find applications in the manufacturing of advanced integrated circuits and microprocessors.
Problems Solved: - The device isolation layer with protrusion structure helps in preventing electrical interference between the active regions. - The precise positioning of gate electrodes and source/drain patterns enhances the performance and efficiency of the semiconductor device.
Benefits: - Improved electrical isolation between active regions. - Enhanced control of electrical currents. - Higher performance and efficiency in electronic devices.
Commercial Applications: - This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics, enhancing their overall functionality and reliability.
Prior Art: - Researchers and engineers can explore prior patents related to semiconductor device isolation techniques and gate electrode configurations to further understand the novelty of this innovation.
Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing processes, device isolation technologies, and gate electrode design to leverage the latest innovations in the field.
Questions about Semiconductor Device Isolation and Gate Electrode Configuration: 1. How does the protrusion structure in the device isolation layer contribute to the performance of the semiconductor device? 2. What are the key factors to consider when designing gate electrodes for optimal functionality in semiconductor devices?
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes: a substrate including first and second active regions wherein a boundary is provided between the first and second active regions, a device isolation layer on the substrate in a trench between the first and second active regions, a first channel pattern and a first source/drain pattern on the first active region, a second channel pattern and a second source/drain pattern on the second active region, a first gate electrode on the first channel pattern and extending across the first active regions, a second gate electrode on the second channel pattern and extending across the second active regions, and active contacts on the first and second source/drain patterns. the device isolation layer includes a protrusion structure between the first active regions. the protrusion structure is adjacent to the boundary.
