Samsung electronics co., ltd. (20240347589). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Youngsoo Song of SUWON-SI (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347589 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as an active region, active pattern, device isolation layer, gate structure, source/drain region, interlayer insulating layer, contact structure, buried conductive structure, and power delivery structure.
- The active region is on a substrate and the active pattern extends in a first direction.
- The device isolation layer surrounds the active pattern.
- The gate structure extends in a second direction.
- The source/drain region is located on the active pattern.
- An interlayer insulating layer covers the source/drain region.
- A contact structure is connected to the source/drain region.
- A buried conductive structure extends in the first direction, passing through the interlayer insulating layer to extend in a third direction.
- A power delivery structure extends from the lower surface of the substrate towards the upper surface and is electrically connected to the buried conductive structure.
- The buried conductive structure includes a body portion and an extension portion extending from a region of at least one side surface of the body portion in the second direction.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits and other electronic systems.
Problems Solved: - Enhances the electrical connectivity and power delivery within semiconductor devices. - Improves the overall functionality and reliability of electronic components.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced electrical connectivity and power delivery capabilities. - Improved reliability and functionality of electronic systems.
Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for the development of high-performance electronic devices. - It can be utilized in the production of advanced consumer electronics, telecommunications equipment, and automotive electronics.
Questions about the technology: 1. How does the buried conductive structure improve the electrical connectivity within the semiconductor device? 2. What are the potential implications of the power delivery structure in enhancing the performance of electronic systems?
Original Abstract Submitted
a semiconductor device includes an active region on a substrate and an active pattern extending in a first direction. a device isolation layer surrounds the active pattern. a gate structure extends in a second direction. a source/drain region is on the active pattern. an interlayer insulating layer covers the source/drain region. a contact structure is connected to the source/drain region. a buried conductive structure extends in the first direction, is electrically connected to the contact structure, and passes through the interlayer insulating layer to extend in a third direction. a power delivery structure extends from a lower surface of the substrate towards an upper surface thereof, and is electrically connected to the buried conductive structure. the buried conductive structure includes a body portion extending in the first direction, and an extension portion extending from a region of at least one side surface of the body portion in the second direction.
