Samsung electronics co., ltd. (20240347563). IMAGE SENSOR INCLUDING JUNCTIONLESS TRANSFER TRANSISTOR simplified abstract
Contents
IMAGE SENSOR INCLUDING JUNCTIONLESS TRANSFER TRANSISTOR
Organization Name
Inventor(s)
Hyeonseop Yoo of Suwon-si (KR)
IMAGE SENSOR INCLUDING JUNCTIONLESS TRANSFER TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347563 titled 'IMAGE SENSOR INCLUDING JUNCTIONLESS TRANSFER TRANSISTOR
The image sensor described in the patent application consists of a substrate, a polysilicon-vertical gate, a photoelectric conversion element, a channel, and a floating diffusion region.
- The polysilicon-vertical gate is located in the upper region near the front surface of the substrate and extends into it.
- The photoelectric conversion element is positioned lower within the substrate compared to the polysilicon-vertical gate.
- The channel, doped with dopants of the same conductivity type as the photoelectric conversion element, is adjacent to the polysilicon-vertical gate.
- The floating diffusion region is situated in the upper region of the substrate, parallel to the front surface, and adjacent to the polysilicon-vertical gate.
- Together, the polysilicon-vertical gate, the photoelectric conversion element, and the floating diffusion region form a junctionless transfer transistor.
Potential Applications: - This technology can be used in digital cameras, smartphones, and other devices that require high-quality image sensors. - It can also be applied in medical imaging equipment, surveillance cameras, and automotive cameras.
Problems Solved: - The image sensor addresses the need for improved image quality and sensitivity in various electronic devices. - It offers a more efficient and compact solution for capturing images with enhanced clarity and detail.
Benefits: - Enhanced image quality and sensitivity. - Improved performance in low-light conditions. - Compact design for integration into various devices.
Commercial Applications: Title: Advanced Image Sensor Technology for Enhanced Visual Capture This technology can be utilized in the consumer electronics industry for the development of high-resolution cameras in smartphones, tablets, and laptops. It can also find applications in the automotive sector for advanced driver-assistance systems (ADAS) and in the medical field for diagnostic imaging equipment.
Questions about Image Sensor Technology: 1. How does this image sensor technology compare to traditional image sensor designs? This image sensor technology offers improved sensitivity and image quality compared to traditional designs, making it suitable for various applications where high-performance imaging is required.
2. What are the key advantages of using a junctionless transfer transistor in image sensors? Junctionless transfer transistors offer simplified device structures, reduced leakage currents, and improved performance, making them ideal for enhancing the functionality of image sensors.
Original Abstract Submitted
an image sensor includes a substrate, a polysilicon-vertical gate, a photoelectric conversion element, a channel, and a floating diffusion region. the substrate has a front surface and a back surface that opposes the front surface. the polysilicon-vertical gate is disposed in an upper region adjacent to the front surface of the substrate and extends into the substrate. the photoelectric conversion element is disposed at a lower position within the substrate with respect to the polysilicon-vertical gate. the channel is disposed adjacent to the polysilicon-vertical gate and doped with dopants of a same conductivity type as the photoelectric conversion element. the floating diffusion region is disposed in the upper region of the substrate and adjacent to the polysilicon-vertical gate in a first parallel direction that is parallel to the front surface of the substrate. the polysilicon-vertical gate, the photoelectric conversion element, and the floating diffusion region constitute a junctionless transfer transistor.
