Samsung electronics co., ltd. (20240347537). COMMON OUTPUT IN 3D STACK FET simplified abstract
Contents
COMMON OUTPUT IN 3D STACK FET
Organization Name
Inventor(s)
Mehdi Saremi of Danville CA (US)
Aravindh Kumar of Mountain View CA (US)
Muhammed Ahosan Ul Karim of San Jose CA (US)
Rebecca Park of Mountain View CA (US)
Harsono Simka of Saratoga CA (US)
COMMON OUTPUT IN 3D STACK FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347537 titled 'COMMON OUTPUT IN 3D STACK FET
The method described in the abstract involves growing epitaxy layers on both sides of a stack of gates and channels, applying a sacrificial layer, growing another epitaxy layer, removing the sacrificial layer, and depositing a metal layer on the epitaxy layers.
- Growing epitaxy layers on both sides of a stack of gates and channels
- Applying a sacrificial layer on the first epitaxy layer
- Growing another epitaxy layer on the sacrificial layer
- Removing the sacrificial layer
- Depositing a metal layer on the epitaxy layers
Potential Applications: - Semiconductor device manufacturing - Integrated circuits - Microelectronics
Problems Solved: - Enhancing semiconductor device performance - Improving manufacturing processes - Increasing efficiency in device production
Benefits: - Higher quality semiconductor devices - Enhanced functionality - Cost-effective manufacturing
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be used in the production of various semiconductor devices, leading to improved performance and efficiency. The market implications include faster production times and higher quality products.
Questions about Semiconductor Device Manufacturing: 1. How does the method described in the patent application improve semiconductor device performance?
- The method enhances performance by optimizing the epitaxy layer growth process, resulting in better quality devices.
2. What are the potential commercial uses of this technology in the semiconductor industry?
- This technology can be applied in the production of various semiconductor devices, leading to improved efficiency and performance.
Original Abstract Submitted
a method for manufacturing a semiconductor device according to one or more embodiments may include growing a first epitaxy layer at a first side and a second side of a stack of gates and channels, applying a sacrificial layer on the first epitaxy layer, growing a second epitaxy layer on the sacrificial layer, removing the sacrificial layer, and depositing a metal layer on the first epitaxy layer and the second epitaxy layer at the first side of the stack of gates and channels.
