Samsung electronics co., ltd. (20240341099). THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kwangyoung Jung of Hwaseong-si (KR)
Kohji Kanamori of Seongnam-si (KR)
Jeehoon Han of Hwaseong-si (KR)
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341099 titled 'THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE
The abstract describes a 3D semiconductor memory device with various components such as row decoder regions, control circuit regions, electrode structures, mold structures, and insulating patterns.
- The memory device includes stacked electrodes in the first and second electrode structures.
- Sacrificial layers are present in the mold structure.
- Vertical channel structures penetrate the electrode structures.
- A separation insulating pattern separates the first electrode structure from the mold structure.
- A separation structure intersects the first electrode structure and extends to the separation insulating pattern.
Potential Applications: - This technology can be used in high-density memory devices for various electronic devices. - It can enhance the performance and storage capacity of semiconductor memory devices.
Problems Solved: - Addresses the need for increased memory storage capacity in electronic devices. - Improves the efficiency and reliability of semiconductor memory devices.
Benefits: - Higher memory storage capacity. - Enhanced performance and reliability. - Improved efficiency in electronic devices.
Commercial Applications: Title: Advanced 3D Semiconductor Memory Devices for Enhanced Storage Capacity This technology can be applied in smartphones, computers, tablets, and other electronic devices requiring high-density memory storage. It can also benefit the data storage industry by providing more efficient and reliable memory solutions.
Questions about 3D Semiconductor Memory Devices: 1. How does this technology compare to traditional memory devices in terms of storage capacity and performance? This technology offers higher storage capacity and improved performance compared to traditional memory devices due to its 3D structure and innovative components.
2. What are the potential challenges in implementing this technology on a larger scale for commercial production? Scaling up the production of these advanced memory devices may pose challenges in terms of manufacturing processes, cost efficiency, and quality control. However, with further research and development, these challenges can be overcome.
Original Abstract Submitted
a 3d semiconductor memory device includes a peripheral circuit structure including a first row decoder region, a second row decoder region, and a control circuit region, a first electrode structure and a second electrode structure, spaced apart in a first direction, and each including stacked electrodes, a mold structure including stacked sacrificial layers, vertical channel structures penetrating the first and second electrode structures, a separation insulating pattern provided between the first electrode structure and the mold structure and penetrating the mold structure, and a separation structure intersecting the first electrode structure in the first direction and extending to the separation insulating pattern, wherein a maximum width of the separation insulating pattern is greater than a maximum width of the separation structure in the second direction.
