Samsung electronics co., ltd. (20240341094). SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract

SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jiyoun Seo of Suwon-si (KR)

Daeho Kim of Suwon-si (KR)

Su Jong Kim of Suwon-si (KR)

Sangho Rha of Suwon-si (KR)

Byung-Sun Park of Suwon-si (KR)

Mingyu Jeon of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240341094 titled 'SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a substrate with a cell array region and a connection region, a stack of electrodes with a staircase structure in the connection region, channel regions that extend through the stack, and a planarization insulating layer covering the stack in the connection region.

• The semiconductor device has a unique structure with vertically stacked electrodes and channel regions that improve performance.
• The planarization insulating layer consists of two layers, one doped with first dopants and the other doped with second dopants, providing enhanced insulation.
• The technology aims to optimize the design and functionality of semiconductor devices for improved efficiency and performance.

Key Features and Innovation

• Stacked electrodes with a staircase structure in the connection region
• Channel regions that vertically extend through the stack
• Planarization insulating layer with two doped layers for enhanced insulation

Potential Applications

The technology can be applied in various semiconductor devices, such as memory chips, processors, and sensors, to enhance their performance and efficiency.

Problems Solved

The technology addresses the need for improved insulation and performance in semiconductor devices by introducing a unique electrode and insulating layer design.

Benefits

• Enhanced performance and efficiency in semiconductor devices
• Improved insulation for better functionality
• Optimal design for increased reliability

Commercial Applications

Title: Advanced Semiconductor Devices for Enhanced Performance The technology can be utilized in the production of memory chips, processors, and sensors for various industries, including electronics, telecommunications, and automotive.

Questions about the Technology

What are the specific advantages of the planarization insulating layer in the semiconductor device?

The planarization insulating layer provides enhanced insulation due to its two-layer structure doped with different dopants, improving the overall performance and reliability of the device.

How does the unique electrode design contribute to the efficiency of the semiconductor device?

The stacked electrodes with a staircase structure in the connection region optimize the flow of electrical signals, leading to improved performance and functionality.

Original Abstract Submitted

a semiconductor device may include a substrate including a cell array region and a connection region, a stack including electrodes, which are vertically stacked on the substrate, and which have a staircase structure in the connection region, channel regions provided on the cell array region that vertically extend through the stack, and a planarization insulating layer that covers the stack in the connection region. the planarization insulating layer may include a first insulating layer in contact with the stack and a second insulating layer that covers the first insulating layer. the first insulating layer may include high-density plasma (hdp) oxide, which is doped with first dopants, and the second insulating layer may include tetraethyl orthosilicate (teos) oxide, which is doped with second dopants.