Samsung electronics co., ltd. (20240341086). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jonghyuk Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341086 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a bit line structure and a bit line capping pattern stacked on a memory cell array region. It also features a peripheral gate structure with a gate dielectric layer, gate electrode, and gate capping pattern stacked on a peripheral circuit region. Additionally, there is a gate spacer on the side surface of the peripheral gate structure, a first peripheral interlayer insulating layer covering the gate structure and spacer, and a first peripheral contact plug penetrating through the insulating layer. The bit line capping pattern consists of a lower and upper capping layer, with the upper layer made of the same material as the first peripheral interlayer insulating layer.
- The semiconductor device includes a unique bit line structure and capping pattern for improved performance.
- The peripheral gate structure is designed with specific layers and materials for efficient operation.
- The gate spacer and interlayer insulating layer enhance the overall functionality of the device.
- The use of the same material in the upper bit line capping layer and the first peripheral interlayer insulating layer ensures compatibility and reliability.
- This innovation aims to optimize the design and performance of semiconductor devices.
Potential Applications: - Memory storage devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Enhancing performance and reliability of semiconductor devices - Improving compatibility between different layers and components - Optimizing design for efficient operation
Benefits: - Increased functionality and performance - Enhanced reliability and compatibility - Improved overall efficiency in semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in various commercial applications such as memory storage devices, integrated circuits, and semiconductor manufacturing. The optimized design and performance improvements can lead to more efficient and reliable semiconductor devices, catering to a wide range of industries.
Questions about Semiconductor Device Technology: 1. How does the use of the same material in the upper bit line capping layer and the first peripheral interlayer insulating layer benefit the overall performance of the device? - By using the same material, the compatibility and reliability of the device are enhanced, leading to improved functionality and efficiency.
2. What specific advantages does the gate spacer provide in the semiconductor device? - The gate spacer helps in optimizing the design by providing additional support and insulation to the peripheral gate structure, contributing to the overall performance of the device.
Original Abstract Submitted
an example semiconductor device includes a bit line structure and a bit line capping pattern that are stacked on a memory cell array region. the device further includes a peripheral gate structure including a peripheral gate dielectric layer, a peripheral gate electrode, and a peripheral gate capping pattern that are stacked on a peripheral circuit region. the device further includes a gate spacer on a side surface of the peripheral gate structure, a first peripheral interlayer insulating layer covering the peripheral gate structure and the gate spacer, and a first peripheral contact plug penetrating through the first peripheral interlayer insulating layer. the bit line capping pattern includes a lower bit line capping layer and an upper bit line capping layer that are stacked. a material of the upper bit line capping layer is same as a material of the first peripheral interlayer insulating layer.
