Samsung electronics co., ltd. (20240339378). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Ryeol Yoo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339378 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with a source/drain pattern on a fin-shaped pattern, a source/drain contact, and a buried conductive pattern with varying widths in different directions.
- The device features a source/drain pattern connected to a fin-shaped pattern on the substrate.
- A buried conductive pattern includes two portions with different widths in a third direction.
- The width of the buried conductive pattern decreases as it moves away from a back wiring line in the first portion.
- In the second portion of the buried conductive pattern, the width increases as it moves away from the back wiring line.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the connectivity and conductivity of semiconductor devices. - Optimizes the layout and design of integrated circuits.
Benefits: - Improved electrical performance. - Enhanced reliability and durability of semiconductor devices. - Increased efficiency in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit industries like telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does the buried conductive pattern improve the performance of the semiconductor device? 2. What are the specific advantages of using a fin-shaped pattern in the source/drain design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, including improvements in connectivity and conductivity. Explore research on optimizing the layout and design of integrated circuits for enhanced electronic performance.
Original Abstract Submitted
a semiconductor device includes a substrate including a substrate having a first side and a second side, a source/drain pattern on a fin-shaped pattern and connected to the fin-shaped pattern, a source/drain contact on the source/drain pattern and connected to the source/drain pattern, and a buried conductive pattern includes a first portion and a second portion, the second portion of between the first portion of the buried conductive pattern and a contact connecting via, at the first portion of the buried conductive pattern a width of the buried conductive pattern in a third direction decreases as the buried conductive pattern goes away from a back wiring line, and at the second portion of the buried conductive pattern, the width of the buried conductive pattern in the third direction increases, as the buried conductive pattern goes away from the back wiring line.
