Samsung electronics co., ltd. (20240339151). SENSE AMPLIFIER, METHOD OF OPERATING THE SAME, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract
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SENSE AMPLIFIER, METHOD OF OPERATING THE SAME, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
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SENSE AMPLIFIER, METHOD OF OPERATING THE SAME, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339151 titled 'SENSE AMPLIFIER, METHOD OF OPERATING THE SAME, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
The abstract describes a sense amplifier with a circuit including two NMOS transistors connected to complementary bit lines, isolation/offset cancellation circuits, and sensing bit lines.
- The sense amplifier circuit consists of a first NMOS transistor connected to a first bit line and a second NMOS transistor connected to a complementary second bit line.
- The first isolation/offset cancellation circuit includes a switch connecting the first bit line to a first sensing bit line and a switch connecting the first bit line to a complementary second sensing bit line.
- The second isolation/offset cancellation circuit includes a switch connecting the second bit line to the second sensing bit line and a switch connecting the second bit line to the first sensing bit line.
Potential Applications: - Memory systems - Signal processing circuits - Integrated circuits requiring high-speed sensing capabilities
Problems Solved: - Improved sensing accuracy - Reduction of noise and offset errors in sensing operations
Benefits: - Enhanced performance in memory and signal processing applications - Increased reliability and efficiency in integrated circuits
Commercial Applications: Title: High-Speed Sense Amplifier for Memory Systems This technology can be utilized in memory systems, signal processing circuits, and other integrated circuits requiring fast and accurate sensing capabilities. The market implications include improved performance and reliability in electronic devices.
Prior Art: Readers can explore prior art related to sense amplifiers, NMOS transistors, and isolation/offset cancellation circuits in semiconductor technologies.
Frequently Updated Research: Stay updated on advancements in sense amplifier design, NMOS transistor technology, and integrated circuit sensing techniques.
Questions about Sense Amplifiers: 1. How do sense amplifiers improve the performance of memory systems?
- Sense amplifiers enhance the accuracy and speed of reading data from memory cells, leading to improved overall system performance.
2. What role do NMOS transistors play in the operation of a sense amplifier?
- NMOS transistors are key components in sense amplifiers, helping amplify and detect signals in memory and other integrated circuits.
Original Abstract Submitted
a sense amplifier which includes a sense amplifier circuit that includes a first nmos transistor and a second nmos transistor, the first nmos transistor being connected to a first bit line and the second nmos transistor being connected to a second bit line complementary to the first bit line, a first isolation/offset cancellation circuit that includes a first isolation switch connecting the first bit line and a first sensing bit line and a first offset cancellation switch connecting the first bit line and a second sensing bit line complementary to the first sensing bit line, and a second isolation/offset cancellation circuit that includes a second isolation switch connecting the second bit line and the second sensing bit line and a second offset cancellation switch connecting the second bit line and the first sensing bit line.
