Samsung electronics co., ltd. (20240324218). NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
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NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324218 titled 'NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract describes a non-volatile memory device with a unique structure, including a substrate with memory cell and connection regions, a mold structure with stacked gate electrodes, mold insulating layers, a channel hole, and a channel structure with specific layers and grain size.
- The memory device has a substrate divided into memory cell and connection regions.
- A mold structure is present with gate electrodes stacked on the memory cell region and connection region in a stepwise manner.
- Mold insulating layers are alternately stacked with the gate electrodes.
- A channel hole vertically passes through the mold structure on the memory cell region.
- The channel structure in the channel hole consists of specific layers including a gate insulating layer, channel layer, and buried insulating layer.
- The channel layer contains a grain with a size ranging from about 20 nm to about 17 µm.
Potential Applications: - Non-volatile memory devices in electronic devices - Data storage applications in various industries
Problems Solved: - Enhanced memory cell structure for improved performance - Efficient data storage capabilities
Benefits: - Increased memory device efficiency - Enhanced data storage capacity - Improved overall performance of electronic devices
Commercial Applications: Title: Advanced Non-Volatile Memory Devices for Enhanced Data Storage This technology can be utilized in smartphones, laptops, servers, and other electronic devices requiring reliable and efficient data storage solutions. The market implications include improved device performance, increased storage capacity, and enhanced user experience.
Questions about the technology: 1. How does the unique structure of this non-volatile memory device contribute to its performance compared to traditional memory devices? 2. What specific advantages does the channel structure with a grain size of about 20 nm to about 17 µm offer in terms of data storage and device efficiency?
Original Abstract Submitted
a non-volatile memory device includes a substrate including a memory cell region and a connection region, a mold structure including a plurality of gate electrodes sequentially stacked on the memory cell region and stacked stepwise on the connection region, and a plurality of mold insulating layers alternately stacked with the plurality of gate electrodes, a channel hole vertically passing through the mold structure on the memory cell region, and a channel structure disposed in the channel hole, wherein the channel structure includes a gate insulating layer, a channel layer, and a buried insulating layer sequentially disposed in the channel hole, and the channel layer includes a grain having a size of about 20 nm to about 17 �m.
