Samsung electronics co., ltd. (20240324194). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

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INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Dongjin Lee of Suwon-si (KR)

Junhee Lim of Suwon-si (KR)

Hakseon Kim of Suwon-si (KR)

Kangoh Yun of Suwon-si (KR)

Sohyun Lee of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324194 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

The abstract describes an integrated circuit device with a unique layout of active regions and gate structures to configure pass transistors that share a drain region.

  • The device includes a central active region, base active regions, and extended active regions defined by a device isolation film.
  • Drain region is in the central active region, while source regions are in the base active regions.
  • Base active regions are spaced apart in different diagonal directions with respect to the central active region.
  • Extended active regions have an L-shape, connecting the central active region and the base active regions.
  • Gate structures cross the base active regions and configure pass transistors along with the active regions.

Potential Applications: - This technology can be used in the semiconductor industry for creating efficient integrated circuits. - It can be applied in various electronic devices that require high-performance transistors.

Problems Solved: - Provides a unique layout design for integrated circuits to optimize space and performance. - Enables the creation of pass transistors that share a drain region efficiently.

Benefits: - Improved performance and efficiency in integrated circuit devices. - Space optimization on the substrate for better integration of components.

Commercial Applications: Title: Innovative Integrated Circuit Design for Enhanced Performance This technology can be utilized in the production of advanced electronic devices such as smartphones, tablets, and computers, enhancing their speed and efficiency. The market implications include increased demand for high-performance electronic devices in various industries.

Prior Art: Readers can explore prior patents related to integrated circuit design, active region layouts, and gate structure configurations to understand the evolution of this technology.

Frequently Updated Research: Researchers are constantly exploring new ways to optimize active region layouts and gate structures for enhanced performance in integrated circuits.

Questions about Integrated Circuit Design: 1. How does the unique layout of active regions and gate structures impact the performance of the integrated circuit device? - The layout optimizes space and connectivity, leading to improved efficiency and performance. 2. What are the potential challenges in implementing this innovative design in large-scale production? - Challenges may include manufacturing complexities and ensuring uniformity in the fabrication process.


Original Abstract Submitted

an integrated circuit device includes a substrate including an active region including a central active region, base active regions and extended active regions integrated together and defined by a device isolation film. a drain region is located in the central active region, and source regions are respectively located in the base active regions. the base active regions are spaced apart from each other in different diagonal directions with respect to the central active region in a plan view. the extended active regions each have an l-shape, connect the central active region and the base active regions, and are spaced apart from each other. gate structures that respectively cross the base active regions and are spaced apart from each other on the substrate. the central active region, the extended active regions, the base active regions, and the gate structures configure pass transistors, and the pass transistors share the drain region.