Samsung electronics co., ltd. (20240324192). ONE-TIME PROGRAMMABLE MEMORY DEVICE simplified abstract
Contents
ONE-TIME PROGRAMMABLE MEMORY DEVICE
Organization Name
Inventor(s)
Eun Young Lee of Suwon-si (KR)
Shigenobu Maeda of Suwon-si (KR)
Kwan Young Kim of Suwon-si (KR)
ONE-TIME PROGRAMMABLE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324192 titled 'ONE-TIME PROGRAMMABLE MEMORY DEVICE
The abstract describes a one-time programmable (OTP) memory device with specific features:
- Semiconductor substrate with write and read regions
- Write gates in the write region
- Read gates in the read region
- Source/drain regions adjacent to the gates in the substrate
- Device isolation layer between the write gates
- Channel regions below write gates with a first conductivity type
- Source/drain regions with a second conductivity type
- Pocket well in the write region with the second conductivity type
Potential Applications: - Secure data storage - Embedded systems - Consumer electronics
Problems Solved: - Providing secure, one-time programmable memory - Enhancing data protection in devices
Benefits: - Increased data security - Reliable one-time programming - Efficient memory storage
Commercial Applications: Title: "Secure One-Time Programmable Memory for Enhanced Data Protection" This technology can be used in industries such as: - Information technology - Semiconductor manufacturing - Data security companies
Questions about the technology: 1. How does the one-time programmable memory device enhance data security? - The device ensures data protection by allowing one-time programming, preventing unauthorized access to sensitive information.
2. What are the key differences between this OTP memory device and traditional memory storage solutions? - This OTP memory device offers secure, one-time programming capabilities, unlike traditional memory devices that allow multiple read/write cycles.
Original Abstract Submitted
a one-time programmable (otp) memory device includes: a semiconductor substrate having a write region and a read region; write gates disposed in the write region of the semiconductor substrate; read gates disposed in the read region of the semiconductor substrate; source/drain regions arranged adjacent to the write gates and the read gates and arranged in the semiconductor substrate; and a device isolation layer located between the write gates and arranged in the semiconductor substrate, wherein, in the semiconductor substrate, channel regions located below the write gates have a first conductivity type, wherein the source/drain regions have a second conductivity type, different from the first conductivity type, and wherein a pocket well is formed in the write region of the semiconductor substrate and has the second conductivity type.
