Samsung electronics co., ltd. (20240324184). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324184 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
The semiconductor device described in the abstract includes a device isolation part on a substrate, dividing it into a first active portion and a second active portion. The first active portion's center is adjacent to the edge of the second active portion. The first active portion contains a first impurity region, while the edge of the second active portion contains a second impurity region. A first bit line is in direct contact with the first impurity region and extends across the substrate in a direction intersecting the first direction. A storage node contact is in contact with the second impurity region, with its upper and lower sidewalls not vertically aligned.
- Device isolation part on a substrate
- First active portion and second active portion defined by the device isolation part
- First impurity region in the center of the first active portion
- Second impurity region in the edge of the second active portion
- First bit line in direct contact with the first impurity region
- Storage node contact in contact with the second impurity region
Potential Applications: - Semiconductor manufacturing - Memory storage devices - Integrated circuits
Problems Solved: - Efficient device isolation on a semiconductor substrate - Improved connectivity between impurity regions and bit lines - Enhanced storage node contact design
Benefits: - Higher performance in semiconductor devices - Increased data storage capacity - Enhanced reliability and durability
Commercial Applications: Title: Advanced Semiconductor Device for Memory Storage Applications This technology can be utilized in the production of memory storage devices, leading to faster and more efficient data storage solutions. The market implications include increased demand for high-performance memory chips in various electronic devices.
Questions about Semiconductor Device Technology: 1. How does the design of the storage node contact improve the overall performance of the semiconductor device? The storage node contact design allows for better connectivity with impurity regions, enhancing the efficiency and reliability of the device.
2. What are the key advantages of having a first bit line in direct contact with the first impurity region? Having the first bit line in direct contact with the first impurity region improves signal transmission and overall device performance.
Original Abstract Submitted
a semiconductor device may include a device isolation part on a substrate, the device isolation part defining a first active portion and a second active portion, with a center portion of the first active portion adjacent in a first direction to an edge portion of the second active portion, a first impurity region may be in the center portion of the first active portion, and a second impurity region may be in the edge portion of the second active portion. a first bit line may be in direct contact with the first impurity region and may extend across the substrate in a second direction that intersects the first direction. a storage node contact may be in contact with the second impurity region, with an upper sidewall and a lower sidewall of the storage node contact on a common side of the storage node contact not vertically aligned with each other.
