Samsung electronics co., ltd. (20240324168). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324168 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
The method of manufacturing a semiconductor device involves forming a target layer on a substrate, creating a mask pattern on the substrate with the target layer, and etching the target layer using the mask pattern as an etching mask to create a resulting pattern. The mask pattern consists of a first mask layer containing an amorphous metal oxide, an amorphous insulating material containing an amorphous metal oxide or no metal, and upper and lower mask layers covering the first mask layer.
- Formation of a target layer on a substrate
- Creation of a mask pattern on the substrate with the target layer
- Etching of the target layer using the mask pattern as an etching mask
- Mask pattern includes a first mask layer with an amorphous metal oxide
- Amorphous insulating material in the mask pattern contains an amorphous metal oxide or no metal
- Upper and lower mask layers cover the first mask layer
Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Improved precision in semiconductor device manufacturing - Enhanced performance of electronic components - Increased efficiency in etching processes
Benefits: - Higher quality semiconductor devices - Greater control over patterning processes - Enhanced functionality of electronic devices
Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers - Research institutions in the field of nanotechnology
Questions about Semiconductor Device Manufacturing: 1. How does the use of an amorphous metal oxide in the mask pattern contribute to the manufacturing process? 2. What are the advantages of having upper and lower mask layers in the mask pattern for etching the target layer?
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a target layer on a substrate, forming a mask pattern on the substrate including the target layer, and etching the target layer using the mask pattern as an etching mask to form a resulting pattern, wherein the mask pattern includes a first mask layer including an amorphous metal oxide, an amorphous insulating material including an amorphous metal oxide or no metal, and an upper mask layer and a lower mask layer covering upper and lower surfaces of the first mask layer, respectively.
