Samsung electronics co., ltd. (20240322012). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byeonghee Son of Suwon-si (KR)
Myunggil Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240322012 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes an active region, a nanosheet stack, gate structures with gate electrodes, source/drain regions, and a device isolation layer.
- The active region extends in a first horizontal direction.
- The nanosheet stack is separate from the active region.
- The gate structures extend in a second horizontal direction and contain gate electrodes.
- Source/drain regions are positioned on the sidewalls of the gate structures.
- A device isolation layer extends in a vertical direction.
- The gate structures consist of a first gate structure with a source/drain region on one sidewall and the device isolation layer on the other, and a second gate structure with source/drain regions on both sidewalls.
- The gate electrodes of the first gate structure include a main gate electrode and multiple sub-gate electrodes, with an internal spacer between the device isolation layer and the sub-gate electrodes.
Potential Applications: - This semiconductor device could be used in advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in high-performance computing systems and data centers. - The technology could be utilized in the development of next-generation sensors and imaging devices.
Problems Solved: - Enhanced performance and efficiency in semiconductor devices. - Improved control over the flow of electrical current. - Reduction of power consumption in electronic devices.
Benefits: - Increased speed and reliability of electronic devices. - Greater energy efficiency leading to longer battery life. - Potential for smaller and more compact device designs.
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology has the potential to revolutionize the semiconductor industry by enabling the development of faster, more efficient electronic devices. It could be of interest to semiconductor manufacturers, electronics companies, and research institutions looking to push the boundaries of technology.
Questions about the technology: 1. How does the placement of the source/drain regions on the sidewalls of the gate structures impact the performance of the semiconductor device? 2. What are the specific advantages of using a nanosheet stack in conjunction with the active region in this semiconductor device?
Original Abstract Submitted
a semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.
