Samsung electronics co., ltd. (20240321989). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seunghyun Lim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321989 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate with an active pattern that includes a lower pattern extending in one direction and multiple sheet patterns above it, spaced apart in a different direction. The device also features a gate structure with a gate electrode and a gate insulating film surrounding the sheet patterns, along with gate capping patterns and gate spacers.
- Lower pattern with sheet patterns above it
- Gate structure with gate electrode and insulating film
- Gate capping patterns and gate spacers
- Substrate as the base of the device
- Multiple layers of patterns for functionality
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits
Problems Solved: - Enhancing semiconductor device performance - Improving efficiency in electronic devices
Benefits: - Increased functionality - Enhanced performance - Improved reliability
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics This technology can be used in various electronic devices, such as smartphones, computers, and other consumer electronics, to improve their performance and efficiency. The market implications include a potential increase in demand for more advanced semiconductor devices in the electronics industry.
Questions about Semiconductor Devices: 1. How do semiconductor devices impact the performance of electronic devices?
- Semiconductor devices play a crucial role in enhancing the functionality and efficiency of electronic devices by providing the necessary components for their operation.
2. What are the key features of advanced semiconductor devices compared to traditional ones?
- Advanced semiconductor devices offer improved performance, increased functionality, and enhanced reliability, making them more suitable for modern electronic applications.
Original Abstract Submitted
a semiconductor device includes a substrate, an active pattern including a lower pattern extending in a first direction and a plurality of sheet patterns above an upper surface of the lower pattern and spaced apart from the lower pattern in a second direction substantially perpendicular to the first direction, a gate structure on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film at least partially surrounding the plurality of sheet patterns, a first gate capping pattern on the gate structure and above the plurality of sheet patterns in the second direction, a gate spacer extending along a side wall of the gate structure, and a second gate capping pattern extending along an upper surface of the gate structure and an upper surface of the first gate capping pattern.
