Samsung electronics co., ltd. (20240321940). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyunchul Yoon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321940 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate with a capacitor structure on top. This capacitor structure includes lower electrodes, supporters, an upper electrode, a dielectric layer, and particles.
- Lower electrodes extend vertically from the substrate surface and are spaced apart.
- Supporters are placed between the lower electrodes for stability.
- An upper electrode is positioned above the lower electrodes.
- A dielectric layer separates each lower electrode from the upper electrode.
- Particles are in contact with the dielectric layer and are situated between the lower electrodes and the upper electrode.
Potential Applications: - This technology can be used in various electronic devices requiring capacitors for energy storage. - It may find applications in memory devices, sensors, and communication systems.
Problems Solved: - Provides a compact and efficient capacitor structure for semiconductor devices. - Enhances the performance and reliability of electronic components.
Benefits: - Improved energy storage capabilities. - Enhanced functionality and durability of electronic devices. - Cost-effective manufacturing process.
Commercial Applications: - This technology can be utilized in the production of smartphones, tablets, and other consumer electronics. - It has potential applications in the automotive industry for advanced driver assistance systems and electric vehicles.
Questions about the technology: 1. How does the arrangement of lower electrodes and particles contribute to the efficiency of the capacitor structure? 2. What are the specific advantages of using supporters in between the lower electrodes in this semiconductor device?
Original Abstract Submitted
a semiconductor device including a substrate and a capacitor structure arranged on the substrate. the capacitor structure includes a plurality of lower electrodes extending in a vertical direction perpendicular to a surface of the substrate and spaced apart from each other, supporters arranged between the plurality of lower electrodes, an upper electrode spaced apart from each of the plurality of lower electrodes, a dielectric layer arranged between each of the lower electrodes and the upper electrode, and a plurality of particles each in contact with the dielectric layer and arranged between each of the plurality of lower electrodes and the upper electrode.
