Samsung electronics co., ltd. (20240321876). SEMICONDUCTOR DEVICE WITH ACTIVE PATTERN INCLUDING A TRANSITION PATTERN AND METHOD FOR FABRICATING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE WITH ACTIVE PATTERN INCLUDING A TRANSITION PATTERN AND METHOD FOR FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seong-Ho Song of Yongin-si (KR)

Jong Han Lee of Yangsan-si (KR)

Jong Ha Park of Suwon-si (KR)

Jae Hyun Lee of Hwaseong-si (KR)

Jong Hoon Baek of Ansan-si (KR)

Da Bok Jeong of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE WITH ACTIVE PATTERN INCLUDING A TRANSITION PATTERN AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321876 titled 'SEMICONDUCTOR DEVICE WITH ACTIVE PATTERN INCLUDING A TRANSITION PATTERN AND METHOD FOR FABRICATING THE SAME

The semiconductor device described in the abstract includes a substrate with first, second, and third regions along a first direction, an active pattern on the substrate extending in the first direction, and first to third gate electrodes on the active pattern extending in a second direction.

  • The active pattern of the first region includes first semiconductor patterns spaced apart from each other and penetrating the first gate electrode.
  • The active pattern of the second region includes second semiconductor patterns spaced apart from each other and penetrating the second gate electrode.
  • The active pattern of the third region includes a transition pattern protruding from the substrate, intersecting the third gate electrode, and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region with different materials.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can be applied in the development of high-performance electronic components.

Problems Solved: - Enhances the efficiency and performance of semiconductor devices. - Allows for more precise control over the semiconductor components.

Benefits: - Improved functionality and reliability of semiconductor devices. - Enables the creation of more complex electronic systems.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the active pattern design contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using different materials in the third region of the device?


Original Abstract Submitted

a semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.