Samsung electronics co., ltd. (20240321805). WET ATOMIC LAYER ETCHING METHOD AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
WET ATOMIC LAYER ETCHING METHOD AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Kyeongbin Lim of Suwon-si (KR)
WET ATOMIC LAYER ETCHING METHOD AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321805 titled 'WET ATOMIC LAYER ETCHING METHOD AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation: The patent application describes a method of manufacturing a semiconductor device by bonding two substrates with metal pads using a planarization process and wet atomic layer etching.
- Metal pads on bonding layers
- Planarization process on substrates
- Wet atomic layer etching to recess metal pad surface
- Bonding substrates using annealing process
Key Features and Innovation: - Utilizes metal pads on bonding layers for semiconductor device manufacturing - Incorporates planarization process to ensure flat surfaces on substrates - Implements wet atomic layer etching to recess metal pad surfaces to a target depth - Bonds substrates using an annealing process for secure attachment
Potential Applications: This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and microprocessors.
Problems Solved: - Ensures precise bonding of substrates with metal pads - Improves the overall quality and reliability of semiconductor devices - Enhances the efficiency of the manufacturing process
Benefits: - Increased accuracy and consistency in semiconductor device production - Enhanced performance and durability of the final products - Cost-effective manufacturing process
Commercial Applications: The technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability in various industries such as telecommunications, consumer electronics, and automotive.
Questions about Semiconductor Device Manufacturing: 1. How does the planarization process contribute to the quality of the semiconductor device? 2. What are the advantages of using wet atomic layer etching in semiconductor manufacturing processes?
Original Abstract Submitted
a method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of the bonding layer of each of the first and second substrates, applying wet atomic layer etching to the surface of the bonding layer so that a surface of the metal pad is recessed to a target depth, and bonding the bonding layer of the first substrate to the bonding layer of the second substrate using an annealing process.
