Samsung electronics co., ltd. (20240321735). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seungbo Ko of Suwon-si (KR)

Sujin Kang of Suwon-si (KR)

Jongmin Kim of Suwon-si (KR)

Donghyuk Ahn of Suwon-si (KR)

Jiwon Oh of Suwon-si (KR)

Chansic Yoon of Suwon-si (KR)

Myeongdong Lee of Suwon-si (KR)

Minyoung Lee of Suwon-si (KR)

Inho Cha of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321735 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a substrate, a word line, a bit line, and a spacer structure. The bit line consists of multiple conductive layers stacked vertically, while the spacer structure features a depletion stopping layer and an inner spacer with specific trap densities.

• The semiconductor device has a unique spacer structure with a depletion stopping layer and an inner spacer.
• The bit line is composed of lower, intermediate, and upper conductive layers stacked vertically.
• The spacer structure includes a material layer with trap densities lower than a silicon nitride layer.
• The depletion stopping layer and inner spacer extend in the vertical direction on one sidewall of the bit line.
• The word line and bit line are oriented in different horizontal directions on the substrate.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can enhance the performance and efficiency of memory storage systems. - The unique spacer structure can improve the reliability and longevity of semiconductor components.

Problems Solved: - Addresses the need for more efficient and reliable semiconductor devices. - Solves issues related to trap densities and depletion in traditional spacer structures. - Enhances the overall functionality and performance of memory storage systems.

Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced reliability and longevity of memory storage systems. - Potential for advancements in semiconductor manufacturing processes.

Commercial Applications: Title: Advanced Semiconductor Devices with Unique Spacer Structure This technology can be utilized in the production of high-performance memory storage systems for various electronic devices. The market implications include increased demand for more efficient and reliable semiconductor components in the tech industry.

Questions about Semiconductor Devices with Unique Spacer Structure: 1. How does the spacer structure in this semiconductor device differ from traditional designs? The spacer structure in this semiconductor device includes a depletion stopping layer and an inner spacer with specific trap densities, providing enhanced performance and reliability. 2. What are the potential applications of this technology beyond memory storage systems? This technology can also be applied in various semiconductor devices requiring improved efficiency and reliability.

Original Abstract Submitted

a semiconductor device includes a substrate, a word line extending on the substrate in a first horizontal direction, a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, and a spacer structure on one sidewall of the bit line, wherein the bit line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer stacked in a vertical direction on the substrate, and the spacer structure includes a depletion stopping layer on one sidewall of the lower conductive layer, extending in the vertical direction and including a material layer having an interfacial trap density less than an interfacial trap density of a silicon nitride layer, and an inner spacer extending in the vertical direction and on one sidewall of the depletion stopping layer.