Samsung electronics co., ltd. (20240321732). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Joonyong Choe of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321732 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation:
The integrated circuit device described in the patent application includes a conductive line with a metal layer and an insulation capping structure. The insulation capping structure consists of two patterns: one with a lower density adjacent to the metal layer, and another with a higher density spaced apart from the metal layer.
- The device has a conductive line with a metal layer and an insulation capping structure.
- The insulation capping structure includes two patterns with different densities.
- The first pattern is adjacent to the metal layer and has a lower density.
- The second pattern is spaced apart from the metal layer and has a higher density.
- The manufacturing process involves forming the conductive line on a substrate, adding a first insulation capping layer with lower density directly on the metal layer, and then adding a second insulation capping layer with higher density on top.
Potential Applications:
This technology could be used in various integrated circuit devices where precise insulation and density control are required.
Problems Solved:
This innovation addresses the need for improved insulation and density control in integrated circuit devices, enhancing their performance and reliability.
Benefits:
The benefits of this technology include better insulation, improved density control, and overall enhanced performance of integrated circuit devices.
Commercial Applications:
Title: Advanced Insulation Capping Structure for Integrated Circuit Devices
This technology could have commercial applications in the semiconductor industry for manufacturing high-performance integrated circuit devices with improved insulation and density control.
Questions about Advanced Insulation Capping Structure for Integrated Circuit Devices:
1. How does the density of the insulation capping patterns impact the performance of the integrated circuit device? 2. What are the specific advantages of using a two-pattern insulation capping structure in integrated circuit devices?
Original Abstract Submitted
an integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. the first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. in order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.
