Samsung electronics co., ltd. (20240321344). SRAM DEVICE INCLUDING BURIED BIT LINE AND BURIED WORD LINE USING BACKSIDE METAL simplified abstract
Contents
SRAM DEVICE INCLUDING BURIED BIT LINE AND BURIED WORD LINE USING BACKSIDE METAL
Organization Name
Inventor(s)
Ho Young Tang of Suwon-si (KR)
Tae-Hyung Kim of Suwon-si (KR)
SRAM DEVICE INCLUDING BURIED BIT LINE AND BURIED WORD LINE USING BACKSIDE METAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321344 titled 'SRAM DEVICE INCLUDING BURIED BIT LINE AND BURIED WORD LINE USING BACKSIDE METAL
The abstract describes a memory device with a memory cell array containing multiple memory cells arranged in columns and rows. The device includes first and second memory cells in the same column but different rows, with bit line transistors connecting them to bit line metal lines on different surfaces of the array.
- Memory device with memory cell array
- Multiple memory cells arranged in columns and rows
- First and second memory cells in the same column but different rows
- Bit line transistors connecting memory cells to bit line metal lines
- First bit line metal line on the upper surface, second bit line metal line on the lower surface of the array
Potential Applications: - Data storage devices - Computer memory systems - Embedded systems
Problems Solved: - Efficient data storage - Improved memory access speed - Enhanced memory cell connectivity
Benefits: - Higher data storage capacity - Faster data retrieval - Enhanced overall system performance
Commercial Applications: Title: "Advanced Memory Devices for Enhanced Data Storage" This technology can be used in various commercial applications such as: - Consumer electronics - Data centers - Automotive systems
Questions about Memory Devices: 1. How does the placement of bit line metal lines on different surfaces of the memory cell array impact data storage efficiency? 2. What are the potential challenges in scaling up this memory device for larger storage capacities?
Frequently Updated Research: Stay updated on the latest advancements in memory device technology to ensure optimal performance and compatibility with evolving systems.
Original Abstract Submitted
a memory device is provided. the memory device includes a memory cell array including a plurality of memory cells arranged in a plurality of columns and rows and including first and second memory cells in a same column and different rows, the plurality of columns intersecting the plurality of rows in a plan view, a first bit line transistor electrically connected between the first memory cell and a first bit line metal line and a second bit line transistor electrically connected between the second memory cell and a second bit line metal line, wherein the first bit line metal line is on an upper surface of the memory cell array, and the second bit line metal line is on a lower surface of the memory cell array opposite the upper surface of the memory cell array.
