Samsung electronics co., ltd. (20240312938). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312938 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple layers and structures that enable its functionality.
- The device includes first gate electrodes, a first channel structure with a first channel layer and a first channel filling insulating layer, second gate electrodes, a second channel structure with a second channel layer and a second channel filling insulating layer, and a central wiring layer connecting the first and second channel layers.
- The first and second channel layers are connected to each other in a region surrounded by the central wiring layer, as are the first and second channel filling insulating layers.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits and microprocessors.
Problems Solved: - This innovation addresses the need for improved connectivity and performance in semiconductor devices by optimizing the layout and structure of the channels and wiring layers.
Benefits: - Enhanced efficiency and reliability in semiconductor devices. - Improved signal processing capabilities. - Increased integration density for more compact electronic devices.
Commercial Applications: - This technology has significant commercial potential in the semiconductor industry for the development of high-performance electronic devices.
Questions about the Technology: 1. How does the central wiring layer improve the connectivity of the semiconductor device? 2. What are the specific advantages of having multiple channel layers in the device design?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology and manufacturing processes to further enhance the performance of devices utilizing this innovative structure.
Original Abstract Submitted
a semiconductor device includes first gate electrodes, a first channel structure penetrating the first gate electrodes and including a first channel layer and a first channel filling insulating layer, second gate electrodes above the first gate electrodes, a second channel structure penetrating the second gate electrodes and including a second channel layer and a second channel filling insulating layer, and a central wiring layer between the first gate electrodes and the second gate electrodes and connected to the first channel layer and the second channel layer, wherein the first channel layer and the second channel layer are connected to each other in a region surrounded by the central wiring layer, and the first channel filling insulating layer and the second channel filling insulating layer are connected to each other in a region surrounded by the central wiring layer.
