Samsung electronics co., ltd. (20240290868). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
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Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290868 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of multiple structures including impurity regions, isolation regions, contact openings, and spacer structures.
- The device includes a first structure with impurity regions and an isolation region, and a second structure on top with a contact opening exposing the impurity region.
- A pattern structure connects the impurity region through the contact opening, with a line portion extending on the second structure.
- A spacer structure is present between the contact opening's side surface and the contact portion, comprising multiple spacer layers.
- The lower end of the second spacer layer is at a higher level than the lower surface of the contact portion.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices with precise contact structures. - It can improve the efficiency and performance of integrated circuits by enhancing the connectivity between different regions.
Problems Solved: - Provides a solution for creating reliable and accurate contact structures in semiconductor devices. - Helps in reducing the risk of electrical shorts and improving overall device functionality.
Benefits: - Enhanced precision in contact formation leading to improved device performance. - Increased reliability and durability of semiconductor devices due to optimized contact structures.
Commercial Applications: Title: Advanced Semiconductor Device Contact Structure for Improved Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and research.
Questions about the technology: 1. How does the spacer structure contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this advanced contact structure technology in mass production?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the efficiency and reliability of semiconductor devices. Stay updated on the latest advancements in contact structure technologies for semiconductor applications.
Original Abstract Submitted
a semiconductor device includes a first structure including a first impurity region, a second impurity region, and an isolation region, a second structure on the first structure and including a contact opening penetrating through the second structure and exposing the first impurity region, a pattern structure including a contact portion connected to the first impurity region in the contact opening, and a line portion on the contact portion and the second structure, and a spacer structure between a side surface of the contact opening and the contact portion. the spacer structure includes a first spacer layer on the side surface of the contact opening, and a second spacer layer between the first spacer layer and the contact portion. a lower end of the second spacer layer is at a higher level than a lower surface of the contact portion.
