Samsung electronics co., ltd. (20240268129). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hongjun Lee of Suwon-si (KR)

Keunnam Kim of Suwon-si (KR)

Hui-Jung Kim of Suwon-si (KR)

Seokhan Park of Suwon-si (KR)

Kiseok Lee of Suwon-si (KR)

Moonyoung Jeong of Suwon-si (KR)

Jay-Bok Choi of Suwon-si (KR)

Hyungeun Choi of Suwon-si (KR)

Jinwoo Han of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240268129 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the patent application consists of various layers and structures, including a lower substrate, lower dielectric structure, memory cell structure, lower bonding pad, upper dielectric structure, upper substrate, transistor, and upper bonding pad. The lower bonding pad and upper bonding pad overlap the memory cell structure, with the top surface of the lower bonding pad in contact with the bottom surface of the upper bonding pad.

• Lower substrate, lower dielectric structure, memory cell structure, lower bonding pad, upper dielectric structure, upper substrate, transistor, and upper bonding pad are key components of the semiconductor device.
• The lower bonding pad and upper bonding pad overlap the memory cell structure, facilitating communication between different layers of the device.
• The arrangement of these components allows for efficient operation and integration within the semiconductor device.
• The design of the device enables improved performance and functionality in various applications.
• Overall, the innovation in this semiconductor device lies in its unique structure and configuration, enhancing its capabilities and versatility.

Potential Applications: - Memory storage devices - Integrated circuits - Microprocessors - Consumer electronics - Communication devices

Problems Solved: - Enhanced communication between different layers of the semiconductor device - Improved performance and functionality in various applications - Efficient operation and integration within the device

Benefits: - Increased efficiency and performance - Enhanced functionality and versatility - Improved communication between components - Potential for advancements in semiconductor technology

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in various commercial applications such as memory storage devices, integrated circuits, microprocessors, consumer electronics, and communication devices. The enhanced performance and functionality offered by these semiconductor devices can lead to improved products and services in the market.

Questions about Semiconductor Devices: 1. How does the unique structure of the semiconductor device contribute to its overall performance and functionality? 2. What are the potential implications of using this technology in consumer electronics and communication devices?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology to explore new possibilities and applications for these innovative devices. Regularly check for research publications, industry developments, and technological breakthroughs in the field to stay informed and ahead of the curve.

Original Abstract Submitted

disclosed are semiconductor devices and their fabrication methods. the semiconductor device comprises a lower substrate, a lower dielectric structure on the lower substrate, a memory cell structure between the lower substrate and the lower dielectric structure, a lower bonding pad in the lower dielectric structure, an upper dielectric structure on the lower dielectric structure, an upper substrate on the upper dielectric structure, a transistor between the upper substrate and the upper dielectric structure, and an upper bonding pad in the upper dielectric structure. a top surface of the lower bonding pad is in contact with a bottom surface of the upper bonding pad. the lower bonding pad and the upper bonding pad overlap the memory cell structure.