Samsung electronics co., ltd. (20240258410). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258410 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes various semiconductor regions and protrusions on a substrate, along with an epitaxial stopper layer and a dummy gate structure.
- The device features a recessed region on the substrate with multiple semiconductor layers and protrusions of different conductivity types.
- An epitaxial stopper layer covers the bottom surface of the recessed region, separating the semiconductor regions and the substrate.
- A dummy gate structure intersects the protrusions on the substrate, adding to the complexity and functionality of the device.
Potential Applications: - This technology could be used in advanced semiconductor devices for various electronic applications. - It may find applications in high-performance computing, telecommunications, and other industries requiring sophisticated semiconductor components.
Problems Solved: - The device addresses the need for precise control and manipulation of semiconductor materials in a compact and efficient manner. - It offers a solution for integrating multiple semiconductor regions on a single substrate with improved performance and functionality.
Benefits: - Enhanced performance and functionality of semiconductor devices. - Improved control and manipulation of semiconductor materials. - Compact design for efficient use of space in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology could be commercialized for use in high-performance computing systems, telecommunications equipment, and other electronic devices requiring advanced semiconductor components. The market implications include improved efficiency, performance, and functionality in various industries.
Questions about Semiconductor Devices: 1. How does the epitaxial stopper layer contribute to the performance of the semiconductor device? The epitaxial stopper layer helps to separate and isolate different semiconductor regions, preventing interference and improving overall device performance.
2. What role does the dummy gate structure play in the functionality of the semiconductor device? The dummy gate structure intersects the protrusions on the substrate, providing additional control and functionality to the device by influencing the flow of electrons within the semiconductor regions.
Original Abstract Submitted
a semiconductor device includes a substrate having a recessed region, a first semiconductor region including a first semiconductor layer on a bottom surface and an inner side surface of the recessed region and a first protrusion on the first semiconductor layer, and having a first conductivity type, a second semiconductor region including a second semiconductor layer on the first semiconductor layer and a second protrusion on the second semiconductor layer, and having a second conductivity type, a third semiconductor region including a third semiconductor layer on the second semiconductor layer and a third protrusion on the third semiconductor layer, and having the first conductivity type, a epitaxial stopper layer covering the bottom surface of the recessed region between the first semiconductor region and the substrate and including a material different from materials of the first semiconductor region, and a dummy gate structure intersecting the first to third protrusions on the substrate.