Samsung electronics co., ltd. (20240250186). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mongsong Liang of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250186 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of three transistors on a substrate, each with source and drain regions, a gate structure, and a channel region connecting the source and drain regions.
- The second and third transistors have multiple channel portions in their respective channel regions, spaced apart in a direction perpendicular to the substrate's surface.
- The width of the channel portion in the third transistor is greater than that of the second transistor.
- Key Features and Innovation:**
- Three transistors with unique channel structures for improved performance.
- Varied channel widths in different transistors for optimized functionality.
- Potential Applications:**
- Advanced electronic devices requiring high-performance transistors.
- Integrated circuits for various applications in electronics.
- Problems Solved:**
- Enhanced transistor performance and efficiency.
- Improved control over current flow in semiconductor devices.
- Benefits:**
- Increased speed and efficiency in electronic devices.
- Better control and optimization of power consumption.
- Commercial Applications:**
- High-speed processors for computers and mobile devices.
- Power-efficient sensors and communication devices for IoT applications.
- Questions about Semiconductor Device:**
1. How does the unique channel structure in the third transistor improve performance?
- The wider channel portion allows for better control of current flow, enhancing overall efficiency.
2. What potential impact could this innovation have on the semiconductor industry?
- This innovation could lead to the development of more advanced and efficient electronic devices, benefiting various industries.
Original Abstract Submitted
a semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. a channel region of the second transistor and a channel region of the third transistor respectively include a plurality of channel portions, the plurality of channel portions spaced apart from each other in a second direction, perpendicular to an upper surface of the substrate, and connected to the source and drain regions, respectively. a width of a channel portion of the third transistor in the first direction is greater than a width of a channel portion of the second transistor in the first direction.
