Samsung electronics co., ltd. (20240234502). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wookhyun Kwon of Suwon-si (KR)
Heonjong Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234502 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a substrate with an active pattern, a channel pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern includes vertically stacked semiconductor patterns that are spaced apart, with the lowermost one being a first semiconductor pattern. The source/drain pattern is connected to the semiconductor patterns, while the gate electrode includes inner electrodes below the semiconductor patterns except the first one. The insulation pattern, located between the first semiconductor pattern and the active pattern, consists of a dielectric pattern and a protection layer.
- The semiconductor device features vertically stacked semiconductor patterns in the channel pattern.
- The gate electrode includes inner electrodes below the semiconductor patterns, except the first one.
- The insulation pattern comprises a dielectric pattern and a protection layer.
- The protection layer is positioned between the dielectric pattern and the first semiconductor pattern.
- The device design aims to enhance the performance and efficiency of semiconductor devices.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and energy efficiency of integrated circuits in electronic devices.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Enables the creation of more compact and powerful electronic devices.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and energy efficiency in electronic applications.
Commercial Applications: - This technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers. - It has the potential to impact the semiconductor industry by enabling the development of more advanced and efficient devices.
Questions about the technology: 1. How does the vertically stacked semiconductor pattern in the channel pattern contribute to the performance of the semiconductor device? 2. What are the specific advantages of having inner electrodes below the semiconductor patterns in the gate electrode design?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device technology to leverage new innovations and improvements in performance and efficiency.
Original Abstract Submitted
a semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. the channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. a lowermost one of the semiconductor patterns may be a first semiconductor pattern. the source/drain pattern may be connected to the semiconductor patterns. the gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. the insulation pattern may be between the first semiconductor pattern and the active pattern. the insulation pattern may include a dielectric pattern and a protection layer. the protection layer may be between the dielectric pattern and the first semiconductor pattern. the protection layer may be between the dielectric pattern and the active pattern.
