Samsung electronics co., ltd. (20240234490). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SHAOFENG Ding of Suwon-si (KR)
JEONG HOON Ahn of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234490 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor substrate with a connection region, a pair of epitaxial patterns, a capacitor, a middle connection layer, an interconnection layer, and a through-via.
- The capacitor is positioned between the pair of epitaxial patterns and consists of an upper portion of the semiconductor substrate, a metal electrode, and a dielectric pattern.
- The through-via penetrates the connection region of the semiconductor substrate and is connected to the capacitor through the interconnection layer and the middle connection layer.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: - Provides a compact and efficient design for integrating capacitors in semiconductor devices. - Enhances the performance and functionality of semiconductor devices.
Benefits: - Improved efficiency and performance of semiconductor devices. - Enables miniaturization and increased functionality in electronic devices.
Commercial Applications: - This technology can be applied in the production of high-performance electronic devices such as smartphones, tablets, and computers.
Questions about the Technology: 1. How does this semiconductor device improve the overall performance of electronic devices? 2. What are the key advantages of integrating capacitors in semiconductor devices?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to enhance the efficiency and functionality of electronic devices.
Original Abstract Submitted
a semiconductor device includes a semiconductor substrate including a connection region, a pair of epitaxial patterns provided at the semiconductor substrate, a capacitor disposed between the pair of epitaxial patterns, a middle connection layer on the capacitor, an interconnection layer on the middle connection layer, and a through-via provided under the interconnection layer and penetrating the connection region of the semiconductor substrate. the capacitor includes an upper portion of the semiconductor substrate between the pair of epitaxial patterns, a metal electrode on the upper portion of the semiconductor substrate, and a dielectric pattern disposed between the upper portion of the semiconductor substrate and the metal electrode. the through-via is connected to the capacitor through the interconnection layer and the middle connection layer.
