Samsung electronics co., ltd. (20240222453). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Min Baek of Suwon-si (KR)
Moon Kyun Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222453 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes an interlayer insulating film with a source/drain pattern, a channel pattern, front and back wirings, and connecting via contacts.
- The interlayer insulating film has a first surface and a second surface, with the source/drain pattern provided within.
- The channel pattern is adjacent to the source/drain pattern and contacts it.
- Front wiring is located on the first surface of the interlayer insulating film, while back wiring is on the second surface.
- First and second connecting via contacts are placed between the source/drain pattern and the back wiring, connecting to the source/drain pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.
Problems Solved: - Enhances the connectivity and functionality of semiconductor devices. - Allows for more compact and efficient circuit designs.
Benefits: - Improved performance and reliability of semiconductor devices. - Enables the creation of smaller and more powerful electronic devices.
Commercial Applications: - This technology can be utilized in the production of smartphones, tablets, and other consumer electronics. - It can also be beneficial in the development of high-speed computing systems.
Questions about the Technology: 1. How does this technology impact the overall efficiency of semiconductor devices? 2. What are the potential challenges in implementing this technology in mass production?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device technology to ensure optimal performance and reliability.
Original Abstract Submitted
a semiconductor device includes an interlayer insulating film including a first surface and a second surface opposite to the first surface in a first direction; a source/drain pattern provided in the interlayer insulating film; a channel pattern adjacent to the source/drain pattern in a second direction and contacting the source/drain pattern; a front wiring provided on the first surface of the interlayer insulating film; a back wiring provided on the second surface of the interlayer insulating film; and a first connecting via contact and a second connecting via contact which are provided between the source/drain pattern and the back wiring and connected to the source/drain pattern.
