Samsung electronics co., ltd. (20240222451). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jaeseoung Park of Suwon-si (KR)
Jeonghyuk Yim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222451 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of an active region, a gate structure, a source/drain region, a first contact structure, and a second contact structure with specific characteristics.
- The second contact structure includes a first layer with a first grain and a second layer with second grains on top.
- The maximum vertical distance within the first layer is equal to the vertical distance of the entire layer, ensuring uniformity.
- The size of the first grain is larger than the size of each second grain.
- The width of the first layer is greater than the width of the first contact structure.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may enhance the performance and efficiency of integrated circuits and microprocessors.
Problems Solved: - The technology addresses the need for improved contact structures in semiconductor devices. - It aims to enhance the overall functionality and reliability of electronic components.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced reliability and longevity of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Contact Structures for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It may also find applications in the automotive industry for advanced driver assistance systems and electric vehicles.
Questions about the technology: 1. How does the size difference between the first and second grains impact the performance of the semiconductor device? 2. What specific advantages does the uniform vertical distance within the first layer provide in terms of functionality and reliability?
Original Abstract Submitted
a semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. the second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. a size of the first grain is greater than a size of each of the second grains. a width of the first layer is greater than a width of the first contact structure.
