Samsung electronics co., ltd. (20240222450). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Moon Kyun Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222450 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern on the upper surface of the fin-shaped pattern, a source/drain etch stop film extending along the upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, and a rear wiring line connected to the buried conductive pattern.
- The field insulating film consists of a first field filling film and a first field stop film, with the first field stop film having etch selectivity with respect to the first field filling film.
- The buried conductive pattern is partially located within the field insulating film, providing electrical connections within the semiconductor device.
- The source/drain etch stop film helps to define the source/drain pattern accurately during the manufacturing process.
- The fin-shaped pattern allows for increased surface area within the semiconductor device, enhancing performance.
- The integration of various films and patterns in the device improves overall functionality and reliability.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the production of high-performance integrated circuits for computing and communication devices.
Problems Solved: - Provides improved electrical connections and insulation within semiconductor devices. - Enhances the precision and accuracy of patterning processes in semiconductor manufacturing.
Benefits: - Increased performance and reliability of semiconductor devices. - Enables the production of more complex and efficient electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for High-Performance Electronics This technology can be utilized in the production of advanced microprocessors, memory chips, and other semiconductor components for consumer electronics, telecommunications, and computing industries. The improved functionality and reliability of the devices can lead to enhanced product performance and competitiveness in the market.
Questions about Semiconductor Device Technology: 1. How does the integration of the buried conductive pattern improve the functionality of the semiconductor device? 2. What are the specific advantages of using a fin-shaped pattern in semiconductor manufacturing processes?
Original Abstract Submitted
a semiconductor device includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern disposed on an upper surface of the fin-shaped pattern, a source/drain etch stop film extending along an upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, a portion of the buried conductive pattern being disposed within the field insulating film, and a rear wiring line connected to the buried conductive pattern. the field insulating film includes a first field filling film and a first field stop film. the first field stop film is disposed between the first field filling film and the substrate. the first field stop film includes a material having etch selectivity with respect to the first field filling film.
