Samsung electronics co., ltd. (20240203831). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Anthony Dongick Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Young Woo Kim of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
Hidenobu Fukutome of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203831 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The abstract describes a semiconductor device with a power delivery network layer, an insulating layer with an opening, a semiconductor layer filling the opening, through-vias connecting the layers, logic and passive elements on the semiconductor layer.
- Power delivery network layer
- Insulating layer with opening
- Semiconductor layer filling the opening
- First through-via connecting to power delivery network layer
- Second through-via connecting layers
- Logic element on semiconductor layer
- Passive element on semiconductor layer
Potential Applications: - Integrated circuits - Power management systems - Electronic devices
Problems Solved: - Efficient power delivery - Compact design - Enhanced performance
Benefits: - Improved power distribution - Higher integration density - Enhanced functionality
Commercial Applications: Title: "Advanced Semiconductor Device for Enhanced Power Delivery" This technology can be used in various industries such as telecommunications, automotive, and consumer electronics for more efficient power management and improved device performance.
Questions about the technology: 1. How does this semiconductor device improve power distribution efficiency? 2. What are the advantages of having logic and passive elements on the semiconductor layer?
Frequently Updated Research: Researchers are continuously exploring ways to enhance the design and performance of semiconductor devices for better power management and overall functionality. Stay updated on the latest advancements in this field for potential future applications.
Original Abstract Submitted
a semiconductor device and a method for manufacturing the same is provided. the semiconductor device includes a power delivery network layer; an insulating layer on the power delivery network layer and having an opening therein; a semiconductor layer filling the opening and covering the insulating layer; a first through-via extending through the semiconductor layer and electrically connected to the power delivery network layer; a second through-via extending through the insulating layer and the semiconductor layer and electrically connected to the power delivery network layer; a logic element on the semiconductor layer and electrically connected to the first through-via; and a passive element on the semiconductor layer and electrically connected to the second through-via.
- Samsung electronics co., ltd.
- Anthony Dongick Lee of Suwon-si (KR)
- Min Chan Gwak of Suwon-si (KR)
- Guk Hee Kim of Suwon-si (KR)
- Young Woo Kim of Suwon-si (KR)
- Jin Kyu Kim of Suwon-si (KR)
- Sang Cheol Na of Suwon-si (KR)
- Yun Suk Nam of Suwon-si (KR)
- Kyoung Woo Lee of Suwon-si (KR)
- Hidenobu Fukutome of Suwon-si (KR)
- H01L23/48
- H01L21/768
- H01L23/528
- H01L25/18
- H10B80/00
- CPC H01L23/481