Samsung electronics co., ltd. (20240178138). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yong Jin Shin of Suwon-si (KR)
Kyoung Min Woo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178138 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a cell region and a peripheral region, a lower electrode on the cell region, an upper electrode surrounding the lower electrode, a capacitor dielectric layer between the electrodes, a barrier layer, an interlayer insulating layer, and a contact penetrating through the layers.
- Lower electrode on cell region of substrate
- Upper electrode surrounding lower electrode
- Capacitor dielectric layer between electrodes
- Barrier layer on upper electrode
- Interlayer insulating layer covering barrier layer
- Contact penetrating through layers
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as memory modules, processors, and integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the connectivity and functionality of the electrodes.
Benefits
The benefits of this technology include increased data processing speed, reduced power consumption, and improved overall performance of electronic devices.
Potential Commercial Applications
The technology could be utilized in the production of advanced memory chips, microprocessors, and other semiconductor components for consumer electronics, telecommunications, and computing industries.
Possible Prior Art
One possible prior art for this technology could be the use of similar barrier layers and interlayer insulating layers in semiconductor devices to improve their performance and reliability.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor devices in terms of efficiency and performance.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not delve into the specific manufacturing processes involved in creating this semiconductor device.
Original Abstract Submitted
a semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.
