SEMICONDUCTOR DEVICE: abstract simplified (18204550)

• This abstract for appeared for patent application number 18204550 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a semiconductor device and a method of manufacturing it. The device consists of a first semiconductor pattern on a substrate, which has a lower channel. On top of the first semiconductor pattern, there is a second semiconductor pattern that is spaced apart from the first pattern in a vertical direction. The second pattern has an upper channel that extends vertically. The device also includes a gate electrode that covers the lower channel and surrounds the upper channel. Additionally, there are source/drain patterns on opposite sides of the upper channel. The substrate and the first semiconductor pattern have a doping concentration of 10/cm or less.

Original Abstract Submitted

A semiconductor device and a method of manufacturing a semiconductor device, the device including a first semiconductor pattern on a substrate, the first semiconductor pattern including a lower channel; a second semiconductor pattern on the first semiconductor pattern and spaced apart from the first semiconductor pattern in a vertical direction, the second semiconductor pattern including an upper channel extending in the vertical direction; a gate electrode covering the lower channel and surrounding the upper channel; and source/drain patterns on opposite sides of the upper channel, wherein the substrate and the first semiconductor pattern have a doping concentration of 10/cm or less.