Mitsubishi electric corporation (20240234237). POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE simplified abstract

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POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE

Organization Name

mitsubishi electric corporation

Inventor(s)

Nobuyoshi Kimoto of Fukuoka (JP)

Mitsunori Aiko of Tokyo (JP)

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240234237 titled 'POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE

Simplified Explanation: The patent application describes a power semiconductor device with high heat dissipation capabilities, utilizing a semiconductor element, a heat sink, grease, adhesive, and a terminal block.

  • The semiconductor device consists of a semiconductor element, a sealant sealing the element, and a power terminal connected to the element.
  • A selective area on the lower surface of the device is bonded to the heat sink using adhesive, while the rest of the surface is in contact with the heat sink through grease.
  • The terminal block includes an electrode on its upper surface, to which the power terminal is fastened and electrically connected.

Key Features and Innovation:

  • Utilizes a combination of adhesive and grease for efficient heat dissipation.
  • Secure electrical connection through the power terminal and electrode on the terminal block.

Potential Applications:

  • Power electronics
  • Automotive industry
  • Renewable energy systems

Problems Solved:

  • Improved heat dissipation in power semiconductor devices
  • Secure electrical connections

Benefits:

  • Enhanced performance and reliability
  • Increased lifespan of semiconductor devices

Commercial Applications: Potential commercial applications include power electronics manufacturing, automotive component production, and renewable energy system development.

Prior Art: Readers can explore prior art related to power semiconductor devices, heat dissipation techniques, and electrical connections in semiconductor technology.

Frequently Updated Research: Stay updated on advancements in power semiconductor devices, heat dissipation technologies, and electrical connection methods for semiconductor elements.

Questions about Power Semiconductor Devices: 1. How does the use of adhesive and grease improve heat dissipation in power semiconductor devices? 2. What are the key components of a terminal block in a power semiconductor device?


Original Abstract Submitted

provided is a power semiconductor device with high heat dissipation from a semiconductor element. the power semiconductor device includes a semiconductor device, a heat sink, grease, an adhesive, and a terminal block, the semiconductor device including the semiconductor element, a sealant sealing the semiconductor element, and a power terminal electrically connected to the semiconductor element, wherein a first area as a selective area of a lower surface of the semiconductor device is bonded to the heat sink through the adhesive, the semiconductor device is in contact with the heat sink through the grease in a second area that is an area other than the selective area of the lower surface of the semiconductor device, the terminal block includes an electrode on an upper surface of the terminal block, and the power terminal is fastened to the terminal block, and is electrically connected to the electrode of the terminal block.