Micron technology, inc. (20240268091). 2-TRANSISTOR MEMORY CELL AND GATE STRUCTURE HAVING MULTIPLE PORTIONS simplified abstract
Contents
2-TRANSISTOR MEMORY CELL AND GATE STRUCTURE HAVING MULTIPLE PORTIONS
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Pankaj Sharma of Boise ID (US)
Nicholas R. Tapias of Boise ID (US)
Scott E. Sills of Boise ID (US)
2-TRANSISTOR MEMORY CELL AND GATE STRUCTURE HAVING MULTIPLE PORTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268091 titled '2-TRANSISTOR MEMORY CELL AND GATE STRUCTURE HAVING MULTIPLE PORTIONS
The patent application describes an apparatus with multiple conductive regions, memory cells, transistors, and a gate structure.
- The apparatus includes a first conductive region, a second conductive region, and a memory cell with two transistors.
- The first transistor is connected to the first and second conductive regions, while the second transistor is connected to a charge storage structure and the second conductive region.
- A gate structure separates the first region, charge storage structure, and second region, with a semiconductor material in the first portion and a conductive material in the second portion.
Potential Applications: - This technology could be used in semiconductor devices, memory storage systems, and integrated circuits. - It may find applications in consumer electronics, data storage, and computing devices.
Problems Solved: - Enhances the performance and efficiency of memory cells and transistors. - Improves the reliability and functionality of semiconductor devices.
Benefits: - Increased data storage capacity. - Faster data processing speeds. - Enhanced overall performance of electronic devices.
Commercial Applications: - This technology could be valuable for semiconductor manufacturers, memory chip producers, and electronics companies. - It has the potential to drive innovation in the tech industry and improve the competitiveness of electronic products in the market.
Questions about the Technology: 1. How does this technology improve the efficiency of memory cells and transistors? 2. What are the potential implications of using a gate structure with semiconductor and conductive materials in electronic devices?
Original Abstract Submitted
some embodiments include apparatuses and methods of forming the apparatuses. one of the apparatuses includes a first conductive region; a second conductive region; a memory cell between the first and second conductive regions and including a first transistor including a first region coupled to the first and second conductive regions, and a charge storage structure separated from the first conduction region, and a second transistor including a second region coupled to the charge storage structure and the second conductive region; and a structure separated from the first region, the charge storage structure, and the second region by a dielectric structure, the structure forming part of a gate of the first transistor and the second transistor, and the structure including a first portion adjacent the dielectric structure, and a second portion adjacent the first portion, wherein the first portion includes a semiconductor material and the second portion includes a conductive material.
