Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays
Organization Name
Inventor(s)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
Wayne Kinney of Emmett ID (US)
Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240265960 titled 'Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays
Simplified Explanation: Some embodiments of the patent application describe a ferroelectric transistor with nested containers for different materials, including gate dielectric material, metal-containing material, ferroelectric material, and gate material.
Key Features and Innovation:
- Ferroelectric transistor design with nested containers for different materials.
- Memory arrays using ferroelectric transistors as memory cells.
- Methods for writing/reading relative to memory cells of memory arrays when the memory cells are metal-ferroelectric-metal-insulator-semiconductor (MFMIS) transistors.
Potential Applications: This technology can be applied in memory arrays, data storage devices, and integrated circuits.
Problems Solved: This technology addresses the need for efficient memory cells with improved performance and reliability.
Benefits:
- Enhanced memory cell performance.
- Improved data storage capabilities.
- Increased reliability in integrated circuits.
Commercial Applications: Potential commercial applications include memory devices, semiconductor manufacturing, and electronics industries.
Questions about Ferroelectric Transistors: 1. What are the main advantages of using ferroelectric transistors in memory arrays? 2. How does the nested container design improve the performance of ferroelectric transistors?
Frequently Updated Research: Ongoing research in the field of ferroelectric transistors focuses on optimizing materials and structures for better device performance and integration in various applications.
Original Abstract Submitted
some embodiments include a ferroelectric transistor. the transistor has gate dielectric material configured as a first container, with the first container having a first inner surface. metal-containing material is configured as a second container nested within said first container. the second container has a second inner surface with an area less than the first inner surface. ferroelectric material is configured as a third container nested within the second container. the third container has a third inner surface with an area less than the second inner surface. gate material is within the third container. some embodiments include memory arrays having ferroelectric transistors as memory cells. some embodiments include methods of writing/reading relative to memory cells of memory arrays when the memory cells are metal-ferroelectric-metal-insulator-semiconductor (mfmis) transistors.
