Micron technology, inc. (20240248619). DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM simplified abstract
Contents
DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
Tomer Tzvi Eliash of Sunnyvale CA (US)
DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240248619 titled 'DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM
The abstract of this patent application describes methods, systems, and apparatuses for determining the application of a read retry operation to a portion of memory based on the likelihood of a read retry timeout meeting a threshold. A reverse trim setting is selected in response to this determination, and the read retry operation is executed using the selected trim setting.
- Key Features and Innovation:
- Determining the likelihood of a read retry timeout meeting a threshold
- Selecting a reverse trim setting based on this likelihood
- Executing the read retry operation with the selected trim setting
- Potential Applications:
- Data storage systems
- Memory management in electronic devices
- Error correction in memory operations
- Problems Solved:
- Improving read retry operations in memory systems
- Enhancing data reliability and integrity
- Optimizing memory performance
- Benefits:
- Reduced data errors and corruption
- Improved system stability and reliability
- Enhanced overall performance of memory operations
- Commercial Applications:
- Data centers
- Consumer electronics
- Automotive systems
- Prior Art:
- Prior research on read retry operations in memory systems
- Studies on error correction techniques in electronic devices
- Frequently Updated Research:
- Ongoing developments in memory management technologies
- Latest advancements in error correction algorithms
Questions about read retry operations:
1. How does the selection of a reverse trim setting impact the execution of a read retry operation?
- The selection of a reverse trim setting helps optimize the read retry operation by adjusting the memory parameters to improve the likelihood of success.
2. What are the potential implications of not applying a read retry operation in memory systems?
- Not applying a read retry operation can lead to increased data errors, reduced system performance, and potential data loss.
Original Abstract Submitted
methods, systems, and apparatuses include determining to apply a read retry operation to a portion of memory. the likelihood of a read retry timeout meeting a threshold is determined. a reverse trim setting is selected in response to determining the likelihood of the read retry timeout meets the threshold. the read retry operation is executed using the selected trim setting.
