Micron technology, inc. (20240241664). ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE simplified abstract
Contents
ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE
Organization Name
Inventor(s)
Zhenming Zhou of San Jose CA (US)
Murong Lang of San Jose CA (US)
Ching-Huang Lu of Fremont CA (US)
Nagendra Prasad Ganesh Rao of Folsom CA (US)
ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240241664 titled 'ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE
Simplified Explanation: The patent application describes a system that can perform corrective read operations on memory segments based on temperature offset values and program erase cycle counts.
Key Features and Innovation:
- System includes a memory device and a processing device.
- Can receive requests for read operations on memory segments.
- Determines if temperature offset values meet threshold criteria associated with program erase cycle counts.
- Performs corrective read operations on segments if criteria are met.
- Modifies sense time parameter of corrective read operations based on temperature offset values and program erase cycle counts.
Potential Applications: This technology can be applied in various industries such as data storage, semiconductor manufacturing, and computer hardware development.
Problems Solved: The system addresses issues related to memory errors caused by temperature variations and program erase cycle counts, ensuring data integrity and reliability.
Benefits:
- Improved data accuracy and reliability.
- Enhanced memory performance.
- Extended lifespan of memory devices.
Commercial Applications: The technology can be utilized in data centers, consumer electronics, and automotive systems to enhance memory functionality and reduce data corruption risks.
Prior Art: Researchers can explore prior patents related to memory correction techniques, temperature monitoring in memory devices, and program erase cycle count management.
Frequently Updated Research: Stay informed about advancements in memory technology, semiconductor manufacturing processes, and data storage innovations to enhance the system's capabilities.
Questions about Memory Correction Technology: 1. How does the system determine if a temperature offset value meets the threshold criteria? 2. What are the potential implications of modifying the sense time parameter in corrective read operations?
Original Abstract Submitted
a system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining whether a temperature offset value of the segment satisfies a threshold criterion associated with a program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.
