Kioxia corporation (20240324249). STORAGE DEVICE simplified abstract
Contents
STORAGE DEVICE
Organization Name
Inventor(s)
Kouji Matsuo of Ama Aichi (JP)
STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324249 titled 'STORAGE DEVICE
The abstract describes a patent application for a memory cell structure that includes a semiconductor layer and pillars connected to conductors and contact regions.
- Memory cell regions consist of a semiconductor layer and pillars connected to conductors and contact regions.
- The conductors have portions extending in different directions and are connected to the semiconductor layer.
- Contact regions include multiple contacts extending in a specific direction.
- Groups are arranged in a specific direction, each containing a memory cell region, a conductor portion, and a contact region.
Potential Applications: - This technology can be used in the development of high-density memory storage devices. - It may find applications in the semiconductor industry for improving memory cell performance.
Problems Solved: - Enhances memory cell efficiency and performance. - Provides a compact and efficient memory cell structure for semiconductor devices.
Benefits: - Increased memory storage capacity. - Improved data processing speed. - Enhanced overall performance of semiconductor devices.
Commercial Applications: Title: "Innovative Memory Cell Structure for Enhanced Semiconductor Devices" This technology can be utilized in the production of advanced memory chips for consumer electronics, data storage systems, and computing devices. It has the potential to revolutionize the semiconductor industry by offering more efficient and high-performance memory solutions.
Questions about the technology: 1. How does this memory cell structure differ from traditional designs? This memory cell structure introduces a more compact and efficient design that enhances performance and storage capacity.
2. What advantages does this technology offer in terms of data processing speed? By optimizing the memory cell structure, this technology can significantly improve data processing speed and overall device performance.
Original Abstract Submitted
a plurality of memory cell regions includes a semiconductor layer extending in a first direction and a pillar having a side surface in contact with the semiconductor layer and extending in a second direction. a first conductor includes a first portion extending in the first direction and a plurality of second portions extending in a third direction and connected to the first portion. one of the second portions is in contact with the semiconductor layer. each of a plurality of contact regions includes a plurality of contacts extending in the second direction. a plurality of groups is arranged in the first direction when viewed in the second direction, each of the groups including one of the plurality of memory cell regions, one of the plurality of second portions, and one of the plurality of contact regions, which are arranged in the first direction when viewed in the second direction.
