Kioxia corporation (20240324241). MAGNETIC MEMORY DEVICE simplified abstract
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Masatoshi Yoshikawa of Setagaya Tokyo (JP)
Tian Li of Yokohama Kanagawa (JP)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324241 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation: The magnetic memory device described in the patent application includes multiple magnetoresistive effect elements and a conductive layer that overlaps with these elements in specific regions.
- The device consists of a first conductive layer, a first magnetoresistive effect element, and a second magnetoresistive effect element.
- The conductive layer has three distinct portions: one that does not overlap with any magnetoresistive effect element, one that overlaps with the central region of the first element, and one that overlaps with the edge region of the first element.
Key Features and Innovation:
- Unique design of the conductive layer allows for precise interaction with magnetoresistive effect elements.
- Optimization of the overlap regions enhances the performance and efficiency of the magnetic memory device.
Potential Applications:
- Data storage devices
- Magnetic sensors
- Magnetic random-access memory (MRAM) technology
Problems Solved:
- Improved data storage capabilities
- Enhanced sensitivity and accuracy in magnetic sensing applications
Benefits:
- Higher performance and efficiency in magnetic memory devices
- Increased data storage capacity
- Enhanced reliability and durability
Commercial Applications: The technology can be utilized in various industries such as data storage, electronics, and telecommunications for developing advanced magnetic memory devices with improved functionality and performance.
Questions about Magnetic Memory Devices: 1. How does the design of the conductive layer impact the performance of the magnetoresistive effect elements? 2. What are the potential challenges in scaling up this technology for mass production?
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Original Abstract Submitted
according to one embodiment, there is provided a magnetic memory device including a first conductive layer; and a first magnetoresistive effect element and a second magnetoresistive effect element that each extends in a first direction, are provided apart from each other in a second direction crossing the first direction, and are each in contact with the first conductive layer, wherein the first conductive layer includes a first portion that does not overlap with any of the first magnetoresistive effect element and the second magnetoresistive effect element when viewed in the first direction, a second portion that overlaps with a central region of the first magnetoresistive effect element when viewed in the first direction, and a third portion that overlaps with an edge region of the first magnetoresistive effect element when viewed in the first direction.
