Kioxia corporation (20240324226). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Shoichi Miyazaki of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324226 titled 'SEMICONDUCTOR MEMORY DEVICE
The memory device described in the patent application consists of a stacked body with electrode layers and insulating layers, columnar bodies passing through the stacked body, and a contact connected to a first electrode layer and passing through one or more second electrode layers. The contact includes a first insulating film, a second insulating film, and a metal film.
- The first electrode layer has a first surface and a second surface, with the first surface farther away from the second electrode layers than the second surface.
- The first end portion of the first insulating film protrudes into the first electrode layer through the second surface, while the second end portion of the second insulating film is in contact with a portion of the second surface.
- The distance between the first end portion and the first surface is shorter than the distance between the second end portion and the first surface.
Potential Applications: - This memory device could be used in various electronic devices such as smartphones, tablets, and computers. - It could also find applications in data storage systems and servers.
Problems Solved: - The memory device addresses the need for efficient and reliable data storage solutions. - It provides a compact and high-performance memory solution for electronic devices.
Benefits: - Improved data storage capacity and speed. - Enhanced reliability and durability of memory devices. - Compact design for space-saving in electronic devices.
Commercial Applications: Memory devices based on this technology could be commercialized for consumer electronics, data centers, and other industries requiring high-performance data storage solutions.
Questions about the technology: 1. How does the design of this memory device improve data storage efficiency? 2. What sets this memory device apart from existing memory technologies in terms of performance and reliability?
Original Abstract Submitted
a memory device includes a stacked body including electrode layers and insulating layers; columnar bodies extending through the stacked body; and a contact coupled to a first electrode layer and passing through one or more second electrode layers, the first electrode layer including a first surface and a second surface, the first surface disposed farther away from the second electrode layers than the second surface. the contact includes a first insulating film, a second insulating film, and a metal film. a first end portion of the first insulating film protrudes into the first electrode layer through the second surface. a second end portion of the second insulating film is in contact with a portion of the second surface. a distance t between the first end portion and the first surface is shorter than a distance t between the second end portion and the first surface.
