Kioxia corporation (20240324217). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Genki Kawaguchi of Yokkaichi (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324217 titled 'MEMORY DEVICE
The memory device described in the abstract includes a substrate, first conductive layers, an insulating layer, pillars, and contacts. The first conductive layers are located above the substrate, with the insulating layer above them. The pillars function as memory cells and have portions facing the first conductive layers. The contacts are connected to the first conductive layers, each penetrating the insulating layer and connected to a terrace portion of one of the first conductive layers.
- Memory device with first conductive layers, insulating layer, pillars, and contacts
- Pillars function as memory cells facing the first conductive layers
- Contacts connected to first conductive layers, penetrating insulating layer
- Terrace portions of first conductive layers not overlapping with each other
- Contacts connected to terrace portions of first conductive layers
Potential Applications: - Memory storage devices - Computer hardware - Data storage systems
Problems Solved: - Efficient memory storage - Enhanced data retrieval - Improved device performance
Benefits: - Increased memory capacity - Faster data access - Enhanced overall device functionality
Commercial Applications: Title: Advanced Memory Storage Technology for Enhanced Data Management This technology can be utilized in various industries such as: - Information technology - Electronics manufacturing - Data centers
Questions about the technology: 1. How does the terrace portion of the first conductive layers contribute to the device's performance? - The terrace portion helps in preventing overlap between the first conductive layers, ensuring efficient operation. 2. What are the potential implications of using pillars as memory cells in this device? - The use of pillars as memory cells can lead to increased data storage capacity and faster access times.
Original Abstract Submitted
a memory device according to an embodiment includes a substrate, first conductive layers, an insulating layer, pillars, and contacts. the first conductive layers are provided above the substrate. the insulating layer is provided above the first conductive layers. the pillars have portions facing the first conductive layers functioning as memory cells. the contacts are connected to the first conductive layers, respectively. each of the first conductive layers has, between itself and the substrate, a terrace portion not overlapping with another first conductive layer. each of the contacts penetrates the insulating layer and is, in a bottom portion thereof, connected to the terrace portion of one first conductive layer among the first conductive layers.
